PVDF-TrFE/SiO2 Composite Film Bulk Acoustic Resonator for Frequency-Modulated Sensor Application

被引:0
作者
Kaneko, Ryosuke [1 ]
Froemel, Joerg [2 ]
Tanaka, Shuji [1 ]
机构
[1] Tohoku Univ, Grad Sch Engn, Sendai, Miyagi, Japan
[2] Tohoku Univ, Adv Inst Mat Res WPI AIMR, Sendai, Miyagi, Japan
来源
2018 IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM (IUS) | 2018年
关键词
PVDF-TrFE/SiO2; composite; Film bulk acoustic resonator; Thickness expansion mode; Temperature dependency; Frequency Stability; MBVD model;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reports a film bulk acoustic resonator (FBAR) using polyvinylidene fluoride- trifluoroethylene (PVDF-TrFE)/SiO2 composite for frequency-modulated sensing. The PVDF-TrFE/SiO2 composite FBAR was designed, simulated and developed. A Micro Electro Mechanical Systems (MEMS) process was adopted for PVDF-TrFE, including xenon difluoride (XeF2) release etching. After poling PVDF-TrFE, the thickness expansion mode was observed at 387-398 MHz. A modified Butterworth-Van Dyke (MBVD) model for a lossy piezoelectric transducer was used for the characterization of the thickness expansion mode. Impedance ratio, coupling coefficient (k(2)) and mechanical quality factor (Q(m)) increase with the radius of the device. The temperature coefficient of frequency is as large as-1430 ppm/degrees C due to decrease in the elastic constants of PVDF-TrFE. The maximum Q(m) is 33 for 80 mu m radius of the device at 20 degrees C, decreasing with temperature raise. Allan variance is 1.15 kHz (i.e. 2.96 ppm) at an averaging time of 1.01 s. These results are important for future sensing using the FBAR.
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页数:4
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