A method of studying dislocation core structures by high-resolution electron microscopy

被引：2
|
作者：
Li, FH
机构：
[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
来源：
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS | 2005年 / 6卷 / 07期
基金：
中国国家自然科学基金;
关键词：
high-resolution electron microscopy; crystal defect; image deconvolution;
D O I：
10.1016/j.stam.2005.05.009
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A method to study the crystal defects at atomic level by high-resolution electron microscopy (HREM) is introduced. The image taken with a field-emission high-resolution electron microscope and not directly reflecting the examined crystal structure can be transformed into the structure image by means of image deconvolution in combination with dynamical scattering effect correction. The principle of image deconvolution and the procedure of technique are briefly introduced. The results of applications on the epilayer Of Si0.76Ge0.24/Si are given. It is shown that atoms in the dislocation core structures have been distinguished individually in the deconvoluted images and the point resolution of images can be improved Lip to the information limit of the field-emission high-resolution electron microscope. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：755 / 760
页数：6
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