Temperature and concentration dependences of self-organization processes in semiconductors

The effects of temperature and dopant concentration on the origination of dissipative structures in semiconductors are investigated. Bipolar conduction of carriers with a nonlinear dependence of the drift velocity on electric field intensity is chosen as the model process. Parameters of p-Te, in which strong-field domains were found experimentally, are used in the analysis. Stationary, spatially uniform electric-field distributions and carrier concentration are determined proceeding from the well-known equations of the one-dimensional held model. The space-charge-wave spectrum in p-type semiconductors is found in an approximation linear with respect to perturbations. Numerical modeling results show that domain-type solitary waves originate at definite dopant concentrations and temperatures. Hausdorff's dimension of the phase portrait of the system is determined.