Interstitial diffusion influence upon two-dimensional boron profiles

被引：0
作者：
Giannazzo, F
Raineri, V
Privitera, V
Priolo, F
机构：
[1] INFM, IT-95129 Catania, Italy
[2] Univ Catania, Dipartimento Fis & Astron, IT-95129 Catania, Italy
[3] CNR, IMETEM, IT-95121 Catania, Italy
来源：
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY | 2002年 / 82-84卷
关键词：
diffusion; interstitials; scanning capacitance microscopy;
D O I：
10.4028/www.scientific.net/SSP.82-84.183
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of interstitials on two-dimensional boron diffusion has been deduced by two-dimensional profiling on samples implanted with I keV B ions. Carrier profiles were measured by scanning capacitance microscopy enhancing depth and lateral resolution by a double bevelling sample preparation, Implants were performed at two different doses (1 X 10(14) cm(-2) and 1 x 10(15) cm(-2)) into patterned wafers with several stripe widths ranging from 0.5 to 5 mum. B transient enhanced diffusion is strongly reduced with decreasing feature size, depending also on implanted dose. The effect is inhibited if a uniform concentration of displaced silicon atoms is obtained by self-Si ion implantation after mask removing.
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收藏
页码：183 / 188
页数：6
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