Here we report on a technique for anisotropic etching of silicon similar to the well established vapor-liquid-solid technique for the growth of semiconductor nanowires. By annealing a patterned gold line on a H terminated silicon surface, Si atoms diffuse into the Au to form a eutectic phase. Upon exposure to etchant gases the dissolved silicon reacts and desorbs from the eutectic phase causing additional silicon to diffuse from the substrate to re-establish the equilibrium eutectic composition. In this manner the patterned eutectic material becomes anisotropically etched into the silicon substrate, in a process we call solid liquid vapor etching.
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Univ Maryland, Dept Mat Sci & Engn, College Pk, MD 20742 USA
USN, Res Lab, Washington, DC 20375 USAUniv Maryland, Dept Mat Sci & Engn, College Pk, MD 20742 USA
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Arizona State Univ, Sch Mat, Tempe, AZ 85287 USAArizona State Univ, Sch Mat, Tempe, AZ 85287 USA
Dailey, Eric
Drucker, Jeff
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Arizona State Univ, Sch Mat, Tempe, AZ 85287 USA
Arizona State Univ, Dept Phys, Tempe, AZ 85287 USAArizona State Univ, Sch Mat, Tempe, AZ 85287 USA
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Univ Kentucky, Dept Chem, Lexington, KY 40506 USAUniv Kentucky, Dept Chem, Lexington, KY 40506 USA
Hudak, Bethany M.
Chang, Yao-Jen
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Univ Kentucky, Dept Chem, Lexington, KY 40506 USAUniv Kentucky, Dept Chem, Lexington, KY 40506 USA
Chang, Yao-Jen
Yu, Lei
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Univ Kentucky, Dept Chem, Lexington, KY 40506 USAUniv Kentucky, Dept Chem, Lexington, KY 40506 USA
Yu, Lei
Li, Guohua
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Univ Kentucky, Dept Chem, Lexington, KY 40506 USAUniv Kentucky, Dept Chem, Lexington, KY 40506 USA
Li, Guohua
Edwards, Danielle N.
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Univ Kentucky, Dept Chem, Lexington, KY 40506 USAUniv Kentucky, Dept Chem, Lexington, KY 40506 USA
Edwards, Danielle N.
Guiton, Beth S.
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Univ Kentucky, Dept Chem, Lexington, KY 40506 USA
Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USAUniv Kentucky, Dept Chem, Lexington, KY 40506 USA