A solid-liquid-vapor mechanism for anisotropic silicon etching

被引:11
作者
O'Toole, Martin [1 ]
Boland, John J.
机构
[1] Univ Dublin Trinity Coll, Sch Chem, Dublin 2, Ireland
基金
爱尔兰科学基金会;
关键词
annealing; elemental semiconductors; etching; gold; nanowires; semiconductor growth; semiconductor materials; silicon;
D O I
10.1063/1.3055606
中图分类号
O59 [应用物理学];
学科分类号
摘要
Here we report on a technique for anisotropic etching of silicon similar to the well established vapor-liquid-solid technique for the growth of semiconductor nanowires. By annealing a patterned gold line on a H terminated silicon surface, Si atoms diffuse into the Au to form a eutectic phase. Upon exposure to etchant gases the dissolved silicon reacts and desorbs from the eutectic phase causing additional silicon to diffuse from the substrate to re-establish the equilibrium eutectic composition. In this manner the patterned eutectic material becomes anisotropically etched into the silicon substrate, in a process we call solid liquid vapor etching.
引用
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页数:3
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