Sub-100nm Al0.7Sc0.3N Thin Films for Next Generation Bulk Acoustic Wave Resonators and Filters

被引：1

作者：

Liu, Chen ^{[1
]}

Li, Minghua ^{[1
]}

Wang, Nan ^{[1
]}

Zhu, Yao ^{[1
]}

机构：

[1] ASTAR, Inst Microelectron, Singapore, Singapore

来源：

2022 IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM (IEEE IUS) | 2022年

关键词：

ScAlN; thin film; bulk acoustic wave; coupling coefficient;

D O I：

10.1109/IUS54386.2022.9957221

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

Thin piezoelectric films with thickness around 100nm are critical for high frequency bulk acoustic resonators and filters, especially in mm-wave frequency range. In this work, 100nm and 50nm 30% Sc doped AlN (Al0.7Sc0.3N) films have been deposited and the high-tone bulk acoustic wave resonators (HBAR) have been fabricated to characterize the thin piezoelectric films. The intrinsic electromechanical coupling coefficient (K-t(2)) of the sub-100nm Al0.7Sc0.3N thin films has been extracted by measurements and modeling of the fabricated HBAR devices. The coupling coefficient of the deposited 100nm and 50nm Al0.7Sc0.3N thin films is 7.9% and 5.6% respectively. These results show that the sub-100nm Sc doped AIN films are promising for the nextgeneration acoustic resonators and filters for mm-wave applications.

引用

页数：3