The influence of growth parameters on the formation on InAs/GaAs by MOCVD

被引：0

作者：

Wang, Hui ^{[1
]}

Wang, Qi ^{[1
]}

Jia, Zhi-Gang ^{[1
]}

Yan, Ying-Ce ^{[1
]}

Huang, Yong-Qin ^{[1
]}

Ren, Xiao-Min ^{[1
]}

机构：

[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

来源：

OPTOELECTRONIC DEVICES AND INTEGRATION IV | 2012年 / 8555卷

关键词：

MOCVD; InAs; Quantum Dot; growth parameters; QUANTUM DOTS;

D O I：

10.1117/12.999608

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

InAs/GaAs quantum dots (QDs) were grown by Metal-Organic Chemical Vapour Deposition (MOCVD) in the Stranski-Krastanow growth mode. The influence of growth parameters such as V/III ratio, growth temperature, QDs deposit thickness and the deposition rate of the overgrowth layer have been investigated. Through the room temperature photoluminescence (PL) spectra, we have obtained the quantum dots' characters. The growth of QDs is very sensitive to the parameters, and the parameters influence the QDs quality nonlinearly. After an extensive study of these growth parameters, we achieve a balance of all the growth parameters with which InAs/GaAs QDs with 80meV of full width at half maximum (FWHM) at 1.12 mu m have been achieved.

引用

页数：7

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