The Design of Quasi-Super Junction and Novel Edge Termination in Junction Barrier Schottky Diode

被引：1

作者：

Hong, Jhen-Min ^{[1
]}

Lai, Yun-Kai ^{[1
]}

Tzou, Chen-Dong ^{[1
]}

Lee, Kung-Yen ^{[1
]}

Hsu, Chih-Chao ^{[2
]}

机构：

[1] Natl Taiwan Univ, Dept Engn Sci & Ocean Engn, Taipei, Taiwan

[2] Natl Chung Shan Inst Sci & Technol, Taoyuan, Taiwan

来源：

2019 IEEE 4TH INTERNATIONAL FUTURE ENERGY ELECTRONICS CONFERENCE (IFEEC) | 2019年

关键词：

4H-SiC; junction barrier Schottky diode (JBS); Breakdown Voltage; quasi-super junction;

D O I：

10.1109/ifeec47410.2019.9015011

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper, the novel 4H-SiC junction barrier Schottky diodes(JBS) were designed and discussed in our research group. Quasi-super junction JBS diode has good forward characteristic which is same with the conventional JBS diode. When the quasi-super junction JBS diode reaches the breakdown voltage in reverse operation, the electric field distribution in the active region is uniform, and the electric field at edge termination can be effectively spread out. In addition, the breakdown voltage of quasi-super junction JBS is higher than that in the conventional design. In our design, the quasi-super junction 4H-SiC JBS dose not have to process with multi epi and trench. Therefore, it can be fabricated by the same method as the conventional JBS diode.

引用

页数：4

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