Device simulation of charge collection and single-event upset

被引:119
作者
Dodd, PE
机构
[1] Sandia National Laboratories
关键词
D O I
10.1109/23.490901
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper we review the current status of device simulation of ionizing-radiation-induced charge collection and single-event upset (SEU), with an emphasis on significant results of recent years, We present an overview of device-modeling techniques applicable to the SEU problem and the unique challenges this task presents to the device modeler, We examine unloaded simulations of radiation-induced charge collection in simple p/n diodes, SEU in dynamic random access memories (DRAM's), and SEU in static random access memories (SRAM's). We conclude with a few thoughts on future issues likely to confront the SEU device modeler.
引用
收藏
页码:561 / 575
页数:15
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