In this paper we review the current status of device simulation of ionizing-radiation-induced charge collection and single-event upset (SEU), with an emphasis on significant results of recent years, We present an overview of device-modeling techniques applicable to the SEU problem and the unique challenges this task presents to the device modeler, We examine unloaded simulations of radiation-induced charge collection in simple p/n diodes, SEU in dynamic random access memories (DRAM's), and SEU in static random access memories (SRAM's). We conclude with a few thoughts on future issues likely to confront the SEU device modeler.
机构:
Univ Pittsburgh, NSF Ctr Space High Performance & Resilient Comp, Pittsburgh, PA 15261 USA
Univ Florida, 560 Schenley Pl, Pittsburgh, PA 15213 USAUniv Pittsburgh, NSF Ctr Space High Performance & Resilient Comp, Pittsburgh, PA 15261 USA
Carlisle, Edward
George, Alan
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h-index: 0
机构:
Univ Pittsburgh, NSF Ctr Space High Performance & Resilient Comp, ECE, 1238D Benedum Hall, Pittsburgh, PA 15261 USAUniv Pittsburgh, NSF Ctr Space High Performance & Resilient Comp, Pittsburgh, PA 15261 USA
George, Alan
JOURNAL OF AEROSPACE INFORMATION SYSTEMS,
2018,
15
(05):
: 282
-
296
机构:
Univ Pittsburgh, NSF Ctr Space High Performance & Resilient Comp, Pittsburgh, PA 15261 USA
Univ Florida, 560 Schenley Pl, Pittsburgh, PA 15213 USAUniv Pittsburgh, NSF Ctr Space High Performance & Resilient Comp, Pittsburgh, PA 15261 USA
Carlisle, Edward
George, Alan
论文数: 0引用数: 0
h-index: 0
机构:
Univ Pittsburgh, NSF Ctr Space High Performance & Resilient Comp, ECE, 1238D Benedum Hall, Pittsburgh, PA 15261 USAUniv Pittsburgh, NSF Ctr Space High Performance & Resilient Comp, Pittsburgh, PA 15261 USA
George, Alan
JOURNAL OF AEROSPACE INFORMATION SYSTEMS,
2018,
15
(05):
: 282
-
296