De Haas-van Alphen Effect in Quasi-Two-Dimensional Material La2RhIn8

被引:6
|
作者
Ohara, Shigeo [1 ]
Shomi, Yoshinobu [1 ]
Sakamoto, Isao [1 ]
机构
[1] Nagoya Inst Technol, Dept Elect & Comp Engn, Nagoya, Aichi 4668555, Japan
关键词
de Haas-van Alphen effect; magnetoresistance; electronic structure; Fermi surface; La2RhIn8;
D O I
10.1143/JPSJS.71S.258
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We have grown a single crystal of La2RhIn8 with the tetragonal structure and have measured the de Haas-van Alphen (dHvA) effect and magnetoresistance in the He-4 temperature region up to 9 T. The two dHvA frequencies alpha = 6220 T and beta = 400 T were observed for the field along the [001] direction. The corresponding cross-sectional areas of the Fermi surfaces of alpha and beta are about 33% and 2% of the Brillouin zone hose area; respectively. The cyclotron mass m(c)* for the alpha is about 0.7m(0), where in is the free electron mass. The angular dependence of the dHvA frequencies suggests that the frequency alpha originates from a large cylindrical Fermi surface elongated the c-axis, and the frequency beta corresponds to a small pocket, The result of the rnagnetoresistance suggests that La2RhIn8 is an uncompensated metal.
引用
收藏
页码:258 / 260
页数:3
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