Naphthalenediimide-Benzothiadiazole Copolymer Semiconductors: Rational Molecular Design for Air-Stable Ambipolar Charge Transport

被引：43

作者：

Gu, Chunling ^{[1
]}

Hu, Wenping ^{[1
]}

Yao, Jiannian ^{[1
]}

Fu, Hongbing ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Chem, BNLMS, Bei Jing 100190, Peoples R China

来源：

CHEMISTRY OF MATERIALS | 2013年 / 25卷 / 10期

基金：

中国国家自然科学基金;

关键词：

naphthalene diimide copolymer; air-stable ambipolar polymer semiconductor; balanced ambipolar charge transport; donor-acceptor conjugated copolymer; FIELD-EFFECT TRANSISTORS; HIGH-PERFORMANCE AMBIPOLAR; LOW-BANDGAP; N-CHANNEL; POLYMER; ELECTRON; MOBILITY; ACCEPTOR; DONOR; HOLE;

D O I：

10.1021/cm401122h

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Rational design of air-stable ambipolar polymeric semiconductors was achieved by covalently connecting naphthalenediimide (NDI) units with benzothiadiazole (BZ) through thiophene (T) linkers, namely, PNDI-mT(BZ)mT (m = 1, 2), in which well-coplanar mT(BZ)mT moieties as a whole act as donors rather than acceptors reported in previous studies. Decreasing the number of thiophene linkers from m = 2 to 1 lowers both LUMO and HOMO energy levels. As a result, the carriers in organic thin film transistors (OTFTs) could be switched from unipolar p-channel only to ambipolar transport. In ambient conditions, PNDI-2T(BZ)2T presents an average hole mobility of 0.07 +/- 0.02 cm(2) V-1 s(-1), while PNDI-T(BZ) T exhibits balanced ambipolar charge transport in a bottom-gate/top-contact device architecture, the average electron and hole mobilities was 0.05 +/- 0.02 (mu(e)) and 0.1 +/- 0.03 (mu(h)) cm(2) V-1 s(-1), respectively. Moreover, OTFTs based on both polymer show good air-stability with negligible changes after stored in ambient over 3 months.

引用

页码：2178 / 2183

页数：6

共 39 条

[1] Design of New Electron Acceptor Materials for Organic Photovoltaics: Synthesis, Electron Transport, Photophysics, and Photovoltaic Properties of Oligothiophene-Functionalized Naphthalene Diimides [J].

Ahmed, Eilaf ;

Ren, Guoqiang ;

Kim, Felix S. ;

Hollenbeck, Emily C. ;

Jenekhe, Samson A. .

CHEMISTRY OF MATERIALS, 2011, 23 (20) :4563-4577

[2] Effect of molecular packing on field-effect performance of single crystals of thienyl-substituted pyrenes [J].

Ashizawa, Minoru ;

Yamada, Koichi ;

Fukaya, Atsuko ;

Kato, Reizo ;

Hara, Kouji ;

Takeya, Jun .

CHEMISTRY OF MATERIALS, 2008, 20 (15) :4883-4890

[3] High electron mobility and ambipolar charge transport in binary blends of donor and acceptor conjugated polymers [J].

Babel, Amit ;

Zhu, Yan ;

Cheng, Kai-Fang ;

Chen, Wen-Chang ;

Jenekhe, Samson A. .

ADVANCED FUNCTIONAL MATERIALS, 2007, 17 (14) :2542-2549

[4] Electroluminescence in Ion-Gel Gated Conjugated Polymer Field-Effect Transistors [J].

Bhat, Shrivalli N. ;

Di Pietro, Riccardo ;

Sirringhaus, Henning .

CHEMISTRY OF MATERIALS, 2012, 24 (21) :4060-4067

[5] Poly(diketopyrrolopyrrole-terthiophene) for Ambipolar Logic and Photovoltaics [J].

Bijleveld, Johan C. ;

Zoombelt, Arjan P. ;

Mathijssen, Simon G. J. ;

Wienk, Martijn M. ;

Turbiez, Mathieu ;

de Leeuw, Dago M. ;

Janssen, Rene A. J. .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2009, 131 (46) :16616-+

[6] VAN DER WAALS VOLUMES + RADII [J].

BONDI, A .

JOURNAL OF PHYSICAL CHEMISTRY, 1964, 68 (03) :441-+

[7] High-mobility ambipolar near-infrared light-emitting polymer field-effect transistors [J].

Buergi, Lukas ;

Turbiez, Mathieu ;

Pfeiffer, Reto ;

Bienewald, Frank ;

Kirner, Hans-Joerg ;

Winnewisser, Carsten .

ADVANCED MATERIALS, 2008, 20 (11) :2217-2224

[8]

Capelli R, 2010, NAT MATER, V9, P496, DOI [10.1038/NMAT2751, 10.1038/nmat2751]

[9] Naphthalenedicarboximide- vs Perylenedicarboximide-Based Copolymers. Synthesis and Semiconducting Properties in Bottom-Gate N-Channel Organic Transistors [J].

Chen, Zhihua ;

Zheng, Yan ;

Yan, He ;

Facchetti, Antonio .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2009, 131 (01) :8-+

[10] High-Performance Ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene Copolymer Field-Effect Transistors with Balanced Hole and Electron Mobilities [J].

Chen, Zhuoying ;

Lee, Mi Jung ;

Ashraf, Raja Shahid ;

Gu, Yun ;

Albert-Seifried, Sebastian ;

Nielsen, Martin Meedom ;

Schroeder, Bob ;

Anthopoulos, Thomas D. ;

Heeney, Martin ;

McCulloch, Iain ;

Sirringhaus, Henning .

ADVANCED MATERIALS, 2012, 24 (05) :647-+

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