Electron-ion coupling effects on radiation damage in cubic silicon carbide

被引：15

作者：

Zhang, Chao ^{[1
,2
]}

Mao, Fei ^{[1
,2
]}

Zhang, Feng-Shou ^{[1
,2
,3
]}

机构：

[1] Beijing Normal Univ, Coll Nucl Sci & Technol, Minist Educ, Key Lab Beam Technol & Mat Modificat, Beijing 100875, Peoples R China

[2] Beijing Radiat Ctr, Beijing 100875, Peoples R China

[3] Natl Lab Heavy Ion Accelerator Lanzhou, Ctr Theoret Nucl Phys, Lanzhou 730000, Peoples R China

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2013年 / 25卷 / 23期

基金：

中国国家自然科学基金;

关键词：

CLUSTERED VACANCY DEFECTS; GENERATED DISPLACEMENT CASCADES; MOLECULAR-DYNAMICS; MELTING TEMPERATURE; METALS; IRRADIATION; SIMULATION; ENERGY;

D O I：

10.1088/0953-8984/25/23/235402

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A two-temperature model has been used to investigate the effects of electron-ion coupling on defect formation and evolution in irradiated cubic silicon carbide. By simulating 10 keV displacement cascades under identical primary knock-on atom conditions, we find that the final displacement and the kinetic energy of the primary knock-on atom decrease rapidly with increasing electron-ion coupling strength. Moreover, by analyzing the number of peak defects, atomic and electronic temperatures, it is found that a higher number of peak defects is created for intermediate coupling strength due to the electronic temperature making a contribution to the disorder. Strong electron-ion coupling rapidly removes energy from the cascade, thus the number of peak defects is lower. Meanwhile, there is a non-monotonic trend in the relationship between the coupling strength and the time at which the temperature of atoms reaches the minimum. Furthermore, we discuss the mechanisms involved.

引用

页数：7