Magnetic field-dependent resistance crossover and anomalous magnetoresistance in topological insulator Bi2Te3

被引:11
作者
Nivedan, Anand [1 ]
Das, Kamal [2 ]
Kumar, Sandeep [1 ]
Singh, Arvind [1 ]
Mardanya, Sougata [2 ]
Agarwal, Amit [2 ]
Kumar, Sunil [1 ]
机构
[1] Indian Inst Technol Delhi, Dept Phys, New Delhi 110016, India
[2] Indian Inst Technol Kanpur, Dept Phys, Kanpur 208016, Uttar Pradesh, India
关键词
weak anti-localization; topological insulator; magnetoresistance; density functional theory; WEAK ANTI-LOCALIZATION; QUANTUM OSCILLATIONS; SURFACE-STATES; THICKNESS; FILMS;
D O I
10.1088/1361-648X/aba06e
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We report a metal-insulator like transition in single-crystalline 3D topological insulator Bi(2)Te(3)at a temperature of 230 K in the presence of an external magnetic field applied normal to the surface. This transition becomes more prominent at larger magnetic field strength with the residual resistance value increasing linearly with the magnetic field. At low temperature, the magnetic field dependence of the magnetoresistance shows a transition from logarithmic to linear behavior and the onset magnetic field value for this transition decreases with increasing temperature. The logarithmic magnetoresistance indicates the weak anti-localization of the surface Dirac electrons while the high temperature behavior originates from the bulk carriers due to intrinsic impurities. At even higher temperatures beyond similar to 230 K, a completely classical Lorentz model type quadratic behavior of the magnetoresistance is observed. We also show that the experimentally observed anomalies at similar to 230 K in the magneto-transport properties do not originate from any stacking fault in Bi2Te3.
引用
收藏
页数:11
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