Ion-implanted Si:P blocked-impurity-band photodetectors for far-infrared and terahertz radiation detection

This paper reports the fabrication details of ion-implanted Si: P blocked-impurity band photodetectors with lateral structure. A set of performance data has been measured under the operating temperature of 5.5 K. The device exhibits good blocking characteristics with low dark current density under 10(-4) A/cm(2). Linear black-body response has been observed at small bias voltage (1 V) and low temperature (5.5 K) with the peak responsivity of 0.8 A/W. The photocurrent (PC) spectra show response peak at 27.3 mu m and extend to 40 mu m (similar to 7.5 THz), which indirectly proves the feasibility of the preparation of Si: P BIB detectors using ion implantation. In addition, other small features in the PC spectra are designated to associate with the photothermal ionization and the silicon phonon absorption processes. Our work provides an alternative convenient approach to fabricate Si: P BIB detector for far-infrared and terahertz radiation detection.