Interaction of benzene with TiO2 surfaces: Relevance to contamination of extreme ultraviolet lithography mirror capping layers

被引:13
作者
Zalkind, Shimon [2 ]
Yakshinskiy, Boris V. [1 ]
Madey, Theodore E.
机构
[1] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA
[2] NRCN, IL-84104 Beer Sheva, Israel
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2008年 / 26卷 / 06期
关键词
adsorption; desorption; organic compounds; titanium compounds; ultraviolet lithography;
D O I
10.1116/1.2978392
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors focus on thermal and nonthermal (radiation-induced) surface processes that affect the reflectivity of TiO2-capped multilayer mirrors used in extreme ultraviolet (EUV) lithography. Low energy electron beams mimic excitations initiated by EUV radiation. Where appropriate, comparison is made with electron bombardment in the vapor of methyl methacrylate (C5H8O2). Benzene adsorbs and desorbs reversibly on TiO2, and the steady state coverage Theta is found to be proportional to the logarithm of the benzene pressure p. This behavior is described by the Tempkin adsorption isotherm, which has the form Theta=const+log p. This isotherm is a consequence of a linear dependence of benzene adsorption energy on Theta. In addition, measurements of cross sections sigma (cm(2)) for electron-stimulated dissociation of benzene on clean and C-covered TiO2 in the range of 10-100 eV reveal surprisingly large values (e.g., similar to 3.5x10(-17) cm(2) at 10 eV primary energy). Thus, low energy secondary electrons excited by EUV lithography photons are expected to contribute substantially to carbon accumulation on clean TiO2 cap layers.
引用
收藏
页码:2241 / 2246
页数:6
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