Diffusion barrier properties of TaNx films prepared by plasma enhanced atomic layer deposition from PDMAT with N2 or NH3 plasma

被引：21

作者：

Xie, Qi ^{[1
,2
]}

Musschoot, Jan ^{[2
]}

Detavernier, Christophe ^{[2
]}

Deduytsche, Davy ^{[2
]}

Van Meirhaeghe, Roland L. ^{[2
]}

Van den Berghe, Sven ^{[3
]}

Jiang, Yu-Long ^{[1
]}

Ru, Guo-Ping ^{[1
]}

Li, Bing-Zong ^{[1
]}

Qu, Xin-Ping ^{[1
]}

机构：

[1] Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

[2] Univ Ghent, Dept Solid State Sci, B-9000 Ghent, Belgium

[3] CEN SCK, Belgian Nucl Res Ctr, LHMA, B-2400 Mol, Belgium

来源：

MICROELECTRONIC ENGINEERING | 2008年 / 85卷 / 10期

基金：

中国国家自然科学基金;

关键词：

Atomic layer deposition; TaN; Diffusion barrier; Cu metallization;

D O I：

10.1016/j.mee.2008.05.026

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Carbon free TaNx films were deposited by plasma enhanced atomic layer deposition (PEALD) using a combination of pentakis(dimethylamino)Ta (PDMAT) and either N-2 or NH3 plasma. Good linearity and saturation behavior were observed for the TaNx films grown with NH3 plasma while non-ideal saturation features were observed for the films grown with N-2 plasma. The thermal stability of the TaN, films could be improved by reducing the pressure of the reactants and by increasing the plasma exposure time. The TaNx films deposited using N-2 plasma exhibit better diffusion barrier properties than the films deposited using NH3 plasma. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2059 / 2063

页数：5

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