Initiation and stagnation of room temperature grain coarsening in cyclically strained gold films

被引:20
作者
Glushko, Oleksandr [1 ]
Dehm, Gerhard [2 ]
机构
[1] Austrian Acad Sci, Erich Schmid Inst Mat Sci, Jahnstr 12, A-8700 Leoben, Austria
[2] Max Planck Inst Eisenforsch GmbH, Max Planck Str 1, D-40237 Dusseldorf, Germany
基金
奥地利科学基金会;
关键词
Dynamic grain coarsening; Grain boundary migration; EBSD; Driving force; Cyclic loading; IN-SITU OBSERVATIONS; BOUNDARY MOTION; DRIVING FORCES; THIN-FILMS; GROWTH; MIGRATION; AL; KINETICS; CRACKING; TILT;
D O I
10.1016/j.actamat.2019.03.004
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Despite the large number of experiments demonstrating that grains in a metallic material can grow at room temperature due to applied mechanical load, the mechanisms and the driving forces responsible for mechanically induced grain coarsening are still not understood. Here we present a systematic study of room temperature grain coarsening induced by cyclic strain in thin polymer-supported gold films. By means of detailed electron backscatter diffraction analysis we were able to capture both the growth of individual grains and the evolution of the whole microstructure on the basis of statistical data over thousands of grains. The experimental data are reported for three film thicknesses with slightly different microstructures and three different amplitudes of cyclic mechanical loading. Although different kinds of grain size evolution with increasing cycle number are observed depending on film thickness and strain amplitude, a single model based on a thermodynamic driving force is shown to be capable to explain initiation and stagnation of grain coarsening in all cases. The main implication of the model is that the grains having lower individual yield stress are coarsening preferentially. Besides, it is demonstrated that the existence of local shear stresses imposed on a grain boundary is not a necessary requirement for room-temperature grain coarsening. (C) 2019 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:99 / 108
页数:10
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