Failure Mechanism and Kinetics Studies of Electroless Ni-P Dissolution in Pb-free Solder Joints under Electromigration

被引:3
作者
Liu, Pilin [1 ]
Chavali, Chaitra [1 ]
Overson, Alan [1 ]
Goyal, Deepak [1 ]
机构
[1] Intel Corp, 5000 W Chandler Blvd,Mail Stop CH5-263, Chandler, AZ 85226 USA
来源
2017 IEEE 67TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2017) | 2017年
关键词
Pb-free solder; electromigration; electroless Ni-P; Ni dissolution; IMC; Sn grain orientation; SnCu; INTEGRATED-CIRCUITS;
D O I
10.1109/ECTC.2017.211
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Electromigration (EM) of Pb-free SnCu solder joints with NiPdAu surface finishes are studied. The failure mechanism and kinetics of electroless Ni-P dissolution under EM are discussed in detail. Under EM, depends on the Sn grain orientations, Ni atoms in Ni-P plating can be quickly consumed and the entire Ni-P plating can be transformed to P rich Ni3P. The volume shrinkage caused by this reaction can induce the Ni3P/Cu separation or accelerate the voids nucleation between IMC/solder. Two interesting phenomena were observed in kinetics studies of Ni dissolution: (1) the existence of long incubation time before the onset of Ni dissolution; (2) Depending on Sn grain orientations, Ni dissolution rate varies dramatically. The current density exponent n (shown in Black's law) for fast Ni dissolution is much larger than that for slow Ni dissolution.
引用
收藏
页码:441 / 447
页数:7
相关论文
共 17 条
[1]  
Black J.R., 1967, Reliability Physics Symposium Proceedings, 6th Annual IEEE International, P148
[2]   Materials challenges in three-dimensional integrated circuits [J].
Chen, Kuan-Neng ;
Tu, King-Ning .
MRS BULLETIN, 2015, 40 (03) :219-222
[3]  
Gorywoda M, 2015, ELEC COMP C, P2030, DOI 10.1109/ECTC.2015.7159881
[4]  
Goyal D., 2002, EL COMP TECHN C
[5]   Material innovation opportunities for 3D integrated circuits from a wireless application point of view [J].
Gu, S. Q. .
MRS BULLETIN, 2015, 40 (03) :233-241
[6]   The formation and conversion of intermetallic compounds in the Cu pillar Sn-Ag micro-bump with ENEPIG Cu substrate under current stressing [J].
Hsiao, Yu-Hsiang ;
Lin, Kwang-Lung .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 27 (03) :2201-2205
[7]   Electromigration-Induced Interfacial Reactions in Cu/Sn/Electroless Ni-P Solder Interconnects [J].
Huang, M. L. ;
Zhou, S. M. ;
Chen, L. D. .
JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (04) :730-740
[8]   Electromigration behavior of lead-free solder flip chip bumps on NiP/Cu metallization [J].
Jang, J. W. ;
Ramanathan, L. N. ;
Frear, D. R. .
JOURNAL OF APPLIED PHYSICS, 2008, 103 (12)
[9]   The mechanism of dense interfacial voids and its impact on solder joint reliability [J].
Liu, Pilin ;
Lin, Cyber ;
Pathangey, Balu ;
Goyal, Deepak .
2016 IEEE 66TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2016, :1128-1134
[10]  
Liu PL, 2015, ELEC COMP C, P99, DOI 10.1109/ECTC.2015.7159578