CMOS-Compatible Learning Device for Neuromorphic Synapse Application using Adjustable Hot Carrier Injections

被引：0

作者：

Woo, Je-Joong ^{[1
]}

Choi, Jong-Moon ^{[1
]}

Kwon, Kee-Won ^{[1
]}

机构：

[1] Sungkyunkwan Univ, Coll Informat & Commun, Suwon, South Korea

来源：

2019 IEEE 62ND INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS) | 2019年

基金：

新加坡国家研究基金会;

关键词：

synaptic device; hot carrier injection; metal-insulator-metal floating gate; neuromorphic circuit; charge sharing; linear programming;

D O I：

10.1109/mwscas.2019.8885281

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we study the kinetics of charging by hot carrier injection (HCI) in CMOS-Compatible floating gate(FG) cell under variety of pulse conditions. The adapted pulse which makes weight update linearly and symmetrically, is generated by adding amount of threshold voltage shifted. To implement the adapted pulse, we propose a 3T1C Metal-Insulator-Metal(MIM) FG with simple yet effective charge sharing scheme. With this scheme we can sample the present threshold voltage and store it in a capacitor. Stored voltage in a capacitor is then coupled to required voltage. Write operation sequence in both cell and arrays is successively simulated in a 180nm CMOS technology. To improve accuracy, we added pre-charging phase which reduced charge sharing error up to by 87.7%.

引用

页码：57 / 60

页数：4