Investigation of technology scaling effect on SiGe HBT oscillator phase noise using impulse sensitivity function

被引：0
|
作者：
Tang, J [1 ]
Niu, GF [1 ]
Sheridan, D [1 ]
机构：
[1] Auburn Univ, ECE Dept, Auburn, AL 36849 USA
来源：
PROCEEDINGS OF THE 2005 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2005年
关键词：
low-frequency noise; phase noise; oscillator; technology scaling; impulse sensitivity function; SiGeHBT;
D O I：
10.1109/BIPOL.2005.1555246
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Using impulse sensitivity function (ISF), the upconversion of low-frequency noise to phase noise in SiGe HBTs is investigated as a function of technology scaling. The 1/f noise upconversion under periodic large signal condition is simulated using a cyclostationary model, which is supported by recent SiGe HBT 1/f noise data, and compared with traditional dc current based model. The impact of technology scaling on various ISF is examined, and implications to technology scaling are discussed.
引用
收藏
页码：260 / 263
页数：4
相关论文
共 50 条
  • [1] SiGe HBT scaling implications on 1/f noise and oscillator phase noise
    Niu, GF
    Tang, J
    Feng, ZM
    Joseph, A
    Harame, DL
    2004 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2004, : 299 - 302
  • [2] Ultra low phase noise sapphire - SiGe HBT oscillator
    Llopis, O
    Cibiel, G
    Kersale, Y
    Regis, M
    Chaubet, M
    Giordano, V
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2002, 12 (05) : 157 - 159
  • [3] Design of a low phase noise Ku-band oscillator using a SiGe HBT
    Regis, M
    Lafontaine, H
    Kovacic, S
    Cibiel, G
    Llopis, O
    MICROWAVE JOURNAL, 2001, 44 (10) : 136 - +
  • [4] Optimization of an ultra low-phase noise sapphire -: SiGe HBT oscillator using nonlinear CAD
    Cibiel, G
    Régis, M
    Llopis, O
    Rennane, A
    Bary, L
    Plana, R
    Kersalé, Y
    Giordano, V
    IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 2004, 51 (01) : 33 - 41
  • [5] HBT SiGe technology dedicated to ultra low phase noise applications
    Van Haaren, B
    Gruhle, A
    Regis, M
    Mahner, C
    Escotte, L
    Llopis, O
    Plana, R
    Graffeuil, J
    EDMO - 1997 WORKSHOP ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS, 1997, : 291 - 296
  • [6] A Comparison of npn vs. pnp SiGe HBT Oscillator Phase Noise Performance in a Complementary SiGe Platform
    Horst, Stephen J.
    Chakraborty, Partha
    Saha, Prabir
    Cressler, John D.
    Gustat, Hans
    Heinemann, Bernd
    Fischer, Gerhard G.
    Knoll, Dieter
    Tillack, Bernd
    2010 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2010, : 13 - 16
  • [7] Ultra low phase noise SiGe HBT application to a C band Sapphire resonator oscillator
    Cibiel, G
    Régis, M
    Llopis, O
    Kersalé, Y
    Giordano, V
    Lafontaine, H
    Plana, R
    Chaubet, M
    2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2002, : 691 - 694
  • [8] MOSFET thermal- and 1/f-noise modulating functions for the impulse sensitivity function theory of oscillator phase noise
    Grözing, M
    Stumpf, T
    Hauger, S
    Berroth, M
    34TH EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS, 2004, : 949 - 952
  • [9] A 64 to 81 GHz PLL with Low Phase Noise in an 80 GHz SiGe HBT Technology
    Liu, Gang
    Trasser, Andreas
    Schumacher, Hermann
    2012 IEEE 12TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2012, : 171 - 174
  • [10] Fully differential 5 to 6 GHz low noise amplifier using SiGe HBT technology
    Erben, U
    Sönmez, E
    ELECTRONICS LETTERS, 2004, 40 (01) : 39 - 41
12345