Optical properties of type II short-period GaAs AlAs superlattices under stress effects

被引：2
|
作者：
Smaoui, F
Maaref, M
Planel, R
机构：
[1] Fac Sci Tunis, Phys Solides Lab, Tunis 1060, Tunisia
[2] CNRS, Microstruct & Microelect Lab, F-92260 Bagneux, France
来源：
MICROELECTRONICS JOURNAL | 1999年 / 30卷 / 07期
关键词：
superlattices; optical transitions;
D O I：
10.1016/S0026-2692(99)00003-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the photoluminescence (PL) studies of two ultra-short type II GaAs/AlAs superlattices (SLs) deposed, respectively, on GaAs and Ga1-xInxAs substrates. The strain induced by the lattice mismatch involved by Ga0.88In0.12As substrate modifies the symmetry of the X conduction ground state in the opposed sense than that involved by the GaAs substrate. We have studied the effects of stress on the conduction and valence band structures. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：631 / 636
页数：6
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