Effect of annealing temperature on the properties of spray deposited Cu2SnS3 thin films

被引：68

作者：

Chalapathi, U. ^{[1
]}

Jayasree, Y. ^{[1
]}

Uthanna, S. ^{[1
]}

Raja, V. Sundara ^{[1
]}

机构：

[1] Sri Venkateswara Univ, Dept Phys, Solar Energy Lab, Tirupati 517502, Andhra Pradesh, India

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2013年 / 210卷 / 11期

关键词：

copper tin sulphide; optical properties; spray pyrolysis; structural properties; sulphurization; thin films; OPTICAL-PROPERTIES; CRYSTAL-STRUCTURE; SNS2;

D O I：

10.1002/pssa.201329157

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Copper tin sulphide (Cu2SnS3), a promising solar cell absorber layer for thin film heterojunction solar cells, was grown onto soda-lime glass substrates by spray pyrolysis technique. The effect of annealing Cu2SnS3 (CTS) films in sulphur atmosphere at different annealing temperatures is investigated. From X-ray diffraction (XRD) and Raman spectra analysis, it is observed that the films exhibit polymorphism with tetragonal and monoclinic CTS phases. While the as-deposited films and the films annealed at 400 and 450 degrees C are found to contain tetragonal as well as monoclinic CTS phases, the films annealed at 500 degrees C are found to be mostly monoclinic CTS. The crystallite size is found to increase from 15 to 40 nm with increase of annealing temperature. From energy dispersive X-ray spectrometer (EDS) analysis, the films annealed at 400 and 450 degrees C are found to be near-stoichiometric Cu2SnS3. The direct optical band gap of CTS films with dominant tetragonal phase is found to be similar to 1.10 eV, while that of films with dominant monoclinic phase is found to be 0.97 eV. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2384 / 2390

页数：7

共 27 条

[1] Preparation and characterization of Cu2SnS3 ternary semiconductor nanostructures via the spray pyrolysis technique for photovoltaic applications [J].

Adelifard, Mehdi ;

Mohagheghi, Mohamad Mehdi Bagheri ;

Eshghi, Hosein .

PHYSICA SCRIPTA, 2012, 85 (03)

[2] A new procedure to prepare semiconducting ternary compounds from binary buffer materials and vacuum-deposited copper for photovoltaic applications [J].

Amlouk, A. ;

Boubaker, K. ;

Amlouk, M. .

VACUUM, 2010, 85 (01) :60-64

[3] Cu2SnS3 and Cu4SnS4 Thin Films via Chemical Deposition for Photovoltaic Application [J].

Avellaneda, David ;

Nair, M. T. S. ;

Nair, P. K. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (06) :D346-D352

[4] Thin film solar cells based on the ternary compound Cu2SnS3 [J].

Berg, Dominik M. ;

Djemour, Rabie ;

Guetay, Levent ;

Zoppi, Guillaume ;

Siebentritt, Susanne ;

Dale, Phillip J. .

THIN SOLID FILMS, 2012, 520 (19) :6291-6294

[5] Raman analysis of monoclinic Cu2SnS3 thin films [J].

Berg, Dominik M. ;

Djemour, Rabie ;

Guetay, Levent ;

Siebentritt, Susanne ;

Dale, Phillip J. ;

Fontane, Xavier ;

Izquierdo-Roca, Victor ;

Perez-Rodriguez, Alejandro .

APPLIED PHYSICS LETTERS, 2012, 100 (19)

[6] Structural and optical properties of Cu3SnS4 sprayed thin films [J].

Bouaziz, M. ;

Ouerfelli, J. ;

Amlouk, M. ;

Belgacem, S. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (10) :3354-3360

[7] Growth of Cu2SnS3 thin films by solid reaction under sulphur atmosphere [J].

Bouaziz, M. ;

Ouerfelli, J. ;

Srivastava, S. K. ;

Bernede, J. C. ;

Amlouk, M. .

VACUUM, 2011, 85 (08) :783-786

[8] Structural and optical properties of Cu2SnS3 sprayed thin films [J].

Bouaziz, M. ;

Amlouk, M. ;

Belgacem, S. .

THIN SOLID FILMS, 2009, 517 (07) :2527-2530

[9]

Camus C., 2008, THESIS HELMHOLTZ ZEN

[10] Synthesis, electrical conductivity, and crystal structure of Cu4Sn7S16 and structure refinement of Cu2SnS3 [J].

Chen, XA ;

Wada, H ;

Sato, A ;

Mieno, M .

JOURNAL OF SOLID STATE CHEMISTRY, 1998, 139 (01) :144-151

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