Modification of Schottky Barrier Properties of Ti/p-type InP Schottky Diode by Polyaniline (PANI) Organic Interlayer

被引：24

作者：

Reddy, P. R. Sekhar ^{[1
]}

Janardhanam, V. ^{[1
]}

Jyothi, I. ^{[1
]}

Yuk, Shim-Hoon ^{[1
]}

Reddy, V. Rajagopal ^{[2
]}

Jeong, Jae-Chan ^{[3
]}

Lee, Sung-Nam ^{[4
]}

Choi, Chel-Jong ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Semicond Phys Res Ctr, Sch Semicond & Chem Engn, Jeonju 561756, South Korea

[2] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India

[3] Elect & Telecommun Res Inst, Daejeon 305700, South Korea

[4] Korea Polytech Univ, Dept Nanoopt Engn, Shihung 429793, South Korea

来源：

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2016年 / 16卷 / 05期

基金：

新加坡国家研究基金会;

关键词：

Schottky diode; PANI; InP; barrier height; interface state density; ELECTRICAL-PROPERTIES; CURRENT-VOLTAGE; TEMPERATURE; CONTACTS; DEFECTS; HEIGHTS; LAYER;

D O I：

10.5573/JSTS.2016.16.5.664

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical properties of Ti/p-type InP Schottky diodes with and without polyaniline (PANI) interlayer was investigated using current-voltage (IV) and capacitance-voltage (C-V) measurements. The barrier height of Ti/p-type InP Schottky diode with PANI interlayer was higher than that of the conventional Ti/p-type InP Schottky diode, implying that the organic interlayer influenced the spacecharge region of the Ti/p-type InP Schottky junction. At higher voltages, the current transport was dominated by the trap free space-charge-limited current and trap-filled space-charge-limited current in Ti/p-type InP Schottky diode without and with PANI interlayer, respectively. The domination of trap filled space-charge-limited current in Ti/p-type InP Schottky diode with PANI interlayer could be associated with the traps originated from structural defects prevailing in organic PANI interlayer.

引用

页码：664 / 674

页数：11

共 50 条

[31] Electrical properties and conduction mechanism of an organic-modified Au/NiPc/n-InP Schottky barrier diode
V. Rajagopal Reddy
Applied Physics A, 2014, 116 : 1379 - 1387
[32] Electronic transport and Schottky barrier heights of p-type CuAlO2 Schottky diodes
Lin, Yow-Jon
Luo, Jie
Hung, Hao-Che
APPLIED PHYSICS LETTERS, 2013, 102 (19)
[33] Modified electrical properties and transport mechanism of Ti/p-InP Schottky structure with a polyvinylpyrrolidone (PVP) polymer interlayer
M. Siva Pratap Reddy
K. Sreenu
V. Rajagopal Reddy
Chinho Park
Journal of Materials Science: Materials in Electronics, 2017, 28 : 4847 - 4855
[34] Anomalous capacitance in temperature and frequency characteristics of a TiW/p-InP Schottky barrier diode
Wang, Qingsong
Chen, Jun
Tang, Hengjing
Li, Xue
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016, 31 (06)
[35] PEI N-doped graphene quantum dots/p-type silicon Schottky diode
Berktas, Zeynep
Yildiz, Mustafa
Seven, Elanur
Orhan, Elif Oz
Altindal, Semsettin
FLATCHEM, 2022, 36
[36] Effects of ultra-thin aluminium interlayer on Schottky barrier parameters of NiGe/n-type Ge Schottky barrier diode
Ding, Hua-Jun
Xue, Zhong-Ying
Wei, Xing
Zhang, Bo
ACTA PHYSICA SINICA, 2022, 71 (20)
[37] Schottky barrier height dependence on the metal work function for p-type Si Schottky diodes
Çankaya, G
Uçar, N
ZEITSCHRIFT FUR NATURFORSCHUNG SECTION A-A JOURNAL OF PHYSICAL SCIENCES, 2004, 59 (11): : 795 - 798
[38] Barrier Parameters and Current Transport Characteristics of Ti/p-InP Schottky Junction Modified Using Orange G (OG) Organic Interlayer
K. Sreenu
C. Venkata Prasad
V. Rajagopal Reddy
Journal of Electronic Materials, 2017, 46 : 5746 - 5754
[39] Electrical characteristics of an organic thin copolymer/p-Si Schottky barrier diode
Sonmezoglu, Sava
Senkul, Sevilay
Tas, Recep
Cankaya, Gueven
Can, Muzaffer
THIN SOLID FILMS, 2010, 518 (15) : 4375 - 4379
[40] Barrier heights engineering of Al/p-Si Schottky contact by a thin organic interlayer
Huang, Wen Chang
Lin, Tien-Chai
Horng, Chia-Tsung
Chen, Chien-Chou
MICROELECTRONIC ENGINEERING, 2013, 107 : 200 - 204

← 1 2 3 4 5 →