RF-MEMS switch design optimization for long-term reliability

被引:0
|
作者
Mulloni, Viviana [1 ]
Solazzi, Francesco [1 ]
Resta, Giuseppe [1 ]
Giacomozzi, Flavio [1 ]
Margesin, Benno [1 ]
机构
[1] Fdn B Kessler FBK CMM, I-38123 Trento, Italy
关键词
RF-switch; long-term measurements; reliability;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This contribution presents an optimization strategy for the mechanical and geometrical characteristics of clamped-clamped RF-MEMS switches in order to enhance their reliability performances both in terms of switch properties control and long-term stress actuation tests. Experimental measurements demonstrated that the optimized version of the capacitive switch investigated shows an improved resistance to high bias voltage, while the optimized ohmic switch shows a lower and more reproducible contact resistance.
引用
收藏
页数:6
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