Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off

被引：324

作者：

Wong, WS ^{[1
]}

Sands, T

Cheung, NW

Kneissl, M

Bour, DP

Mei, P

Romano, LT

Johnson, NM

机构：

[1] Univ Calif Berkeley, Dept Mat Sci & Mineral Engn, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[3] Xerox Corp, Palo Alto Res Ctr, Elect Mat Lab, Palo Alto, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 10期

关键词：

D O I：

10.1063/1.124693

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Indium-gallium nitride (InGaN) multiple-quantum-well (MQW) light-emitting diode (LED) membranes, prefabricated on sapphire growth substrates, were created using pulsed-excimer laser processing. The thin-film InGaN MQW LED structures, grown on sapphire substrates, were first bonded onto a Si support substrate with an ethyl cyanoacrylate-based adhesive. A single 600 mJ/cm(2), 38 ns KrF (248 nm) excimer laser pulse was directed through the transparent sapphire, followed by a low-temperature heat treatment to remove the substrate. Free-standing InGaN LED membranes were then fabricated by immersing the InGaN LED/adhesive/Si structure in acetone to release the device from the supporting Si substrate. The current-voltage characteristics and room-temperature emission spectrum of the LEDs before and after laser lift-off were unchanged. (C) 1999 American Institute of Physics. [S0003-6951(99)02636-4].

引用

页码：1360 / 1362

页数：3

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