Semiconductor devices fabricated from actinide oxides

被引：25

作者：

Meek, Thomas T. ^{[1
]}

von Roedern, B. ^{[2
]}

机构：

[1] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA

[2] Natl Ctr Photovolta, Nrel Golden, CO 80401 USA

来源：

VACUUM | 2008年 / 83卷 / 01期

关键词：

Urania; Solar cells; Active; Devices; Semiconductive;

D O I：

10.1016/j.vacuum.2008.04.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Recent investigations of the semiconductive properties of urania indicate that the oxides of uranium may be useful in the fabrication of certain active electronic devices. UO2 and U3O8 have been characterized as to their photo-optical properties and active devices have been fabricated from urania. (c) 2008 Elsevier Ltd. All rights reserved.

引用

页码：226 / 228

页数：3

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