Surface morphologies of homoepitaxial ZnO thin films on non-miscut ZnO substrates

被引：1

作者：

Wei, M. ^{[1
]}

Boutwell, R. C. ^{[1
]}

Schoenfeld, W. V. ^{[1
]}

机构：

[1] Univ Cent Florida, CREOL, Coll Opt & Photon, Orlando, FL 32816 USA

来源：

APPLIED SURFACE SCIENCE | 2013年 / 277卷

关键词：

Non-miscut ZnO substrates; Molecular beam epitaxy; Homoepitaxy; Atomic force microscopy; Surface morphology; TEMPERATURE; PLASMA; POLAR;

D O I：

10.1016/j.apsusc.2013.04.037

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

ZnO thin films were grown on Zn-polar non-miscut ZnO substrates by plasma-assisted molecular beam epitaxy (PAMBE). With an electrostatic ion trap applied to the oxygen plasma source, the etching effect by plasma was significantly reduced. Atomically flat surfaces with one monolayer step height along the [0001] direction were achieved at a low growth temperature of 610 degrees C. Good surface morphology with root mean square (RMS) roughness as small as 0.16 nm was achieved. High oxygen plasma power and low Zn flux were necessary to achieve a step-flow growth mode with a homogeneous surface morphology. It was found that the growth rate and surface RMS roughness decreased with increased growth temperature. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：263 / 267

页数：5

共 23 条

[1] Preparation of an Epitaxy-Ready Surface of a ZnO(0001) Substrate [J].

Akasaka, Shunsuke ;

Nakahara, Ken ;

Yuji, Hiroyuki ;

Tsukazaki, Atsushi ;

Ohtomo, Akira ;

Kawasaki, Masashi .

APPLIED PHYSICS EXPRESS, 2011, 4 (03)

[2] Bulk ZnO: Current Status, Challenges, and Prospects [J].

Avrutin, Vitaliy ;

Cantwell, Gene ;

Zhang, Jizhi ;

Song, J. J. ;

Silversmith, Donald J. ;

Morkoc, Hadis .

PROCEEDINGS OF THE IEEE, 2010, 98 (07) :1339-1350

[3] Radio-frequency oxygen plasma as a sterilization source [J].

Bol'shakov, AA ;

Cruden, BA ;

Mogul, R ;

Rao, MVVS ;

Sharma, SP ;

Khare, BN ;

Meyyappan, M .

AIAA JOURNAL, 2004, 42 (04) :823-832

[4] Characterization of homoepitaxial and heteroepitaxial ZnO films grown by pulsed laser deposition [J].

Chen, ZQ ;

Yamamoto, S ;

Kawasuso, A ;

Xu, Y ;

Sekiguchi, T .

APPLIED SURFACE SCIENCE, 2005, 244 (1-4) :377-380

[5] Issues in ZnO homoepitaxy [J].

Cho, MW ;

Harada, C ;

Suzuki, H ;

Minegishi, T ;

Yao, T ;

Ko, H ;

Maeda, K ;

Nikura, I .

SUPERLATTICES AND MICROSTRUCTURES, 2005, 38 (4-6) :349-363

[6] Surface morphology of c-plane sapphire (α-alumina) produced by high temperature anneal [J].

Cuccureddu, F. ;

Murphy, S. ;

Shvets, I. V. ;

Porcu, M. ;

Zandbergen, H. W. ;

Sidorov, N. S. ;

Bozhko, S. I. .

SURFACE SCIENCE, 2010, 604 (15-16) :1294-1299

[7] Next-generation hydrothermal ZnO crystals [J].

Ehrentraut, Dirk ;

Maeda, Katsumi ;

Kano, Masataka ;

Fujii, Katsushi ;

Fukuda, Tsuguo .

JOURNAL OF CRYSTAL GROWTH, 2011, 320 (01) :18-22

[8] High-quality ZnO epilayers grown on Zn-face ZnO substrates by plasma-assisted molecular beam epitaxy [J].

Kato, H ;

Sano, M ;

Miyamoto, K ;

Yao, T .

JOURNAL OF CRYSTAL GROWTH, 2004, 265 (3-4) :375-381

[9] Growth of 2 inch ZnO bulk single crystal by the hydrothermal method [J].

Maeda, K ;

Sato, M ;

Niikura, I ;

Fukuda, T .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (04) :S49-S54

[10] Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates [J].

Nakahara, K. ;

Akasaka, S. ;

Yuji, H. ;

Tamura, K. ;

Fujii, T. ;

Nishimoto, Y. ;

Takamizu, D. ;

Sasaki, A. ;

Tanabe, T. ;

Takasu, H. ;

Amaike, H. ;

Onuma, T. ;

Chichibu, S. F. ;

Tsukazaki, A. ;

Ohtomo, A. ;

Kawasaki, M. .

APPLIED PHYSICS LETTERS, 2010, 97 (01)

← 1 2 3 →