A Triple-Mode Balanced Linear CMOS Power Amplifier Using a Switched-Quadrature Coupler

被引:42
作者
Jeon, Hamhee [1 ]
Park, Yunseo [3 ]
Huang, Yan-Yu [4 ]
Kim, Jihwan [4 ]
Lee, Kun-Seok [5 ]
Lee, Chang-Ho [2 ]
Kenney, J. Stevenson [2 ]
机构
[1] RF Micro Devices RFMD, Torrance, CA 90505 USA
[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30308 USA
[3] Qualcomm Inc, San Diego, CA 92121 USA
[4] Intel Corp, Hillsboro, OR 97124 USA
[5] Marvell Semicond Inc, Santa Clara, CA 95054 USA
关键词
Balanced topology; cascode; CMOS; integrated passive device (IPD); load immunity; multi-mode; power amplifier (PA); quadrature coupler; RF switches; WCDMA; T/R SWITCH;
D O I
10.1109/JSSC.2012.2193510
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A triple-mode class-AB balanced linear power amplifier (PA) is realized in standard 0.18-mu m CMOS technology. For the average efficiency enhancement, the triple-mode operation realizes a switched-quadrature coupler with a balanced topology to achieve robust load insensitivity. The PA and RF switches uniquely utilize the isolation port of the switched-quadrature coupler as a signal path in a low-power (LP) mode of operation, and the incorporated output matching network satisfies the vertical bar Gamma vertical bar = 1 condition from the quadrature coupler in the LP mode while providing the necessary load-pull impedance from the PA output side in the high-power (HP) mode. To obtain low loss and high quality factor (Q) of the passive output-combining network, a transformer-based quadrature coupler is implemented using a silicon-based integrated passive device process. With a 3.4-V power supply, the PA transmits a maximum output power of 28.4 dBm with 40.7% of power-added efficiency (PAE) and linear output power up to 26.6 dBm with 35% of the PAE using a 3-GPP WCDMA modulated signal. With the triple-mode operation, a PAE at 16 dBm is enhanced from 11.1% to 17%, and 47 mA of quiescent current is saved. The PA also shows robust operation under 2.5:1 of VSWR condition, achieving 1 dB of the gain variation and less than 3.9 dB of ACLR variation. This work demonstrates the potential of a highly efficient CMOS PA for WCDMA applications.
引用
收藏
页码:2019 / 2032
页数:14
相关论文
共 19 条
[1]   A 2.4 GHz Fully Integrated Linear CMOS Power Amplifier With Discrete Power Control [J].
An, Kyu Hwan ;
Lee, Dong Ho ;
Lee, Ockgoo ;
Kim, Hyungwook ;
Han, Jeonghu ;
Kim, Woonyun ;
Lee, Chang-Ho ;
Kim, Haksun ;
Laskar, Joy .
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2009, 19 (07) :479-481
[2]   A Fully Integrated Dual-Mode Highly Linear 2.4 GHz CMOS Power Amplifier for 4G WiMax Applications [J].
Chowdhury, Debopriyo ;
Hull, Christopher D. ;
Degani, Ofir B. ;
Wang, Yanjie ;
Niknejad, Ali M. .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2009, 44 (12) :3393-3402
[3]  
Eisele K., 1965, Solid-State Circuits Conference. Digest of Technical Papers. 1965 IEEE International (Feb 1965), VVIII, P18
[4]   A 2-GHz quadrature hybrid implemented in CMOS technology [J].
Frye, RC ;
Kapur, S ;
Melville, RC .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2003, 38 (03) :550-555
[5]   A 0.5-μm CMOS T/R switch for 900-MHz wireless applications [J].
Huang, FJ ;
O, K .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2001, 36 (03) :486-492
[6]   A 40% PAE Linear CMOS Power Amplifier with Feedback Bias Technique for WCDMA Applications [J].
Jeon, Hamhee ;
Lee, Kun-Seok ;
Lee, Ockgoo ;
An, Kyu Hwan ;
Yoon, Youngchang ;
Kim, Hyungwook ;
Lee, Dong Ho ;
Lee, Jongsoo ;
Lee, Chang-Ho ;
Laskar, Joy .
2010 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS RFIC SYMPOSIUM, 2010, :561-564
[7]   A 0.18-μm CMOS balanced amplifier for 24-GHz applications [J].
Jin, Jun-De ;
Hsu, Shawn S. H. .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2008, 43 (02) :440-445
[8]   A highly linear and efficient differential CMOS power amplifier with harmonic control [J].
Kang, Jongchan ;
Yoon, Jehyung ;
Min, Kyoungjoon ;
Yu, Daekyu ;
Nam, Joongjin ;
Yang, Youngoo ;
Kim, Bumman .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2006, 41 (06) :1314-1322
[9]  
Kim J, 2010, IEEE RAD FREQ INTEGR, P387, DOI 10.1109/RFIC.2010.5477362
[10]   Digital-IF WCDMA handset transmitter IC in 0.25-μm SiGe BiCMOS [J].
Leung, VW ;
Larson, LE ;
Gudem, PS .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (12) :2215-2225