Pulsed laser deposition of epitaxial GaNxAs1-x on GaAs

被引：5

作者：

Hung, WK ^{[1
]}

Chern, MY ^{[1
]}

Fan, JC ^{[1
]}

Lin, TY ^{[1
]}

Chen, YF ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei, Taiwan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 26期

关键词：

D O I：

10.1063/1.124234

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial layers of GaNxAs1-x were grown on (001) GaAs substrates by pulsed laser ablation of a GaAs target in an ammonia (NH3) atmosphere. High-resolution x-ray diffraction indicates the existence of a threshold NH3 pressure, above which the incorporated N content x increases linearly with increasing NH3 pressure. The band-gap dependence of GaNxAs1-x on x for x less than or equal to 2.9% is examined by optical absorption and photoconductivity measurements at room temperature. We found that the band-gap energy reduces with higher N composition, and our results agree approximately with the prediction based on the dielectric model. (C) 1999 American Institute of Physics. [S0003-6951(99)04426-5].

引用

页码：3951 / 3953

页数：3

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