One-shot current conserving quantum transport modeling of phonon scattering in n-type double-gate field-effect-transistors

We apply a recently developed one-shot current conserving lowest order approximation (LOA) to the modeling of inelastic transport in silicon double-gate transistors using the non-equilibrium Green's function formalism. The transport properties are compared to those given by the commonly adopted selfconsistent Born approximation (SCBA). We find that LOA reproduces well the current reduction due to phonon scattering, as given by the SCBA. This good agreement is further improved by adopting a conserving analytical-continuation approach. In ultimate thin-film devices, the combination of LOA and analytical-continuation techniques offers the same accuracy as the SCBA but at a much reduced computational cost. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775365]