Gap-filling of Cu-Al alloy into nanotrenches by cyclic metalorganic chemical vapor deposition

被引：2

作者：

Moon, H. K. ^{[1
]}

Lee, S. J. ^{[1
]}

Yoon, J. ^{[2
]}

Kim, H. ^{[2
]}

Lee, N. -E. ^{[1
,3
]}

机构：

[1] Sungkyunkwan Univ SKKU, Sch Adv Mat Sci & Engn, Ctr Adv Plasma Surface Technol, Suwon 440746, Gyeonggi Do, South Korea

[2] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

[3] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, Gyeonggi Do, South Korea

来源：

MATERIALS RESEARCH BULLETIN | 2012年 / 47卷 / 10期

关键词：

Alloys; Thin films; Vapor deposition; Electron microscopy; Microstructure; THIN-FILMS; COPPER; ROUTE;

D O I：

10.1016/j.materresbull.2012.04.107

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, Cu-Al alloy thin films with lower values of electrical resistivity than that of an Al-free Cu thin film were produced by cyclic metalorganic chemical vapor deposition (MOCVD), followed by thermal annealing of the Cu/Al multilayer formed, with controlled Cu and Al precursor delivery times. The Ru-coated SiO2 trench with the opening width of 50 nm and aspect ratio of 1:6.7 could be completely filled by the Cu-Al alloy. The Ru/SiO2 trench, filled conformally and voidlessly by the Cu-Al (0.7 at.%) alloy, showed no presence of intermetallic compounds. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：2961 / 2965

页数：5

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