Effects of thickness and atmospheric annealing on structural, electrical and optical properties of GZO thin films by spray pyrolysis

被引：68

作者：

Rao, T. Prasada ^{[1
,2
]}

Kumar, M. C. Santhosh ^{[1
]}

Sooraj Hussain, N. ^{[2
]}

机构：

[1] Natl Inst Technol, Dept Phys, Adv Mat Lab, Tiruchirappalli 620015, Tamil Nadu, India

[2] Univ Porto, Dept Phys, INESC Porto, P-4169007 Oporto, Portugal

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2012年 / 541卷

关键词：

Thin films; Chemisorption; Electrical properties; Optical properties; ZINC-OXIDE; ZNO FILMS; BAND; PHOTOLUMINESCENCE; TEMPERATURE; XPS; LUMINESCENCE; ORIENTATION;

D O I：

10.1016/j.jallcom.2012.05.128

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Gallium doped zinc oxide (GZO) films have been prepared on glass substrates by the spray pyrolysis (SP) technique. The effects of thickness and annealing in air and oxygen on structural, electrical and optical properties of GZO thin films were investigated. As-deposited films were found polycrystalline with hexagonal structure that showed compressive stress along the c-axis. The compressive stress was found to decrease by thickness and by annealing in air or oxygen. The best characteristics have been obtained after heat treatment in oxygen, where the highest carrier concentrations have been achieved and with visible transmittance of 85-70% and resistivity of 4.21-2.25 x 10(-3) Omega cm with increasing thickness. The band gaps of oxygen annealed samples are found to have low values in comparison to air annealed and as deposited samples. The band gap dependence on the film thickness and annealing atmosphere is correlated to the shrinkage effect. Photoluminescence (PL) study was confirmed that broad visible emission in GZO films due to both the intrinsic traps and deep level vacancies. (C) 2012 Elsevier B. V. All rights reserved.

引用

页码：495 / 504

页数：10

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