A MEMS-based thermal infrared emitter for an integrated NDIR spectrometer

被引：12

作者：

Calaza, C. ^{[1
]}

Salleras, M. ^{[1
]}

Sabate, N. ^{[1
]}

Santander, J. ^{[1
]}

Cane, C. ^{[1
]}

Fonseca, L. ^{[1
]}

机构：

[1] Ctr Nacl Microelect IMB CNM CSIC, Inst Microelect Barcelona, Barcelona 08193, Spain

来源：

MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS | 2012年 / 18卷 / 7-8期

关键词：

GAS SENSORS; METAL;

D O I：

10.1007/s00542-012-1459-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel micromachined thermal infrared emitter using a heavily boron doped silicon slab as radiating element is presented. The fabrication process has been designed to allow the integration of such infrared emitters with an array of thermopile infrared detectors, with the aim of achieving an integrated non-dispersive infrared microspectrometer. A first set of infrared emitters with a common size for the doped silicon radiating slab (1,100 x 300 x 8 mu m(3)) has been successfully fabricated and characterized. The working temperature of the Joule-heated radiating slabs has been controlled by means of DC and pulsed electrical signals, achieving temperatures well beyond 700A degrees C. The thermal time constant measured in pulsed operation, around 50 ms, is adequate to enable the direct electrical modulation of the emitted radiation up to a frequency of 5 Hz while maintaining the full modulation depth. The temperature distribution in the radiating elements has been analyzed using two different thermal imaging methods.

引用

页码：1147 / 1154

页数：8

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