Neutron-Induced Upsets in NAND Floating Gate Memories

被引：21

作者：

Gerardin, Simone ^{[1
]}

Bagatin, Marta ^{[1
]}

Ferrario, Alberto ^{[2
]}

Paccagnella, Alessandro ^{[1
]}

Visconti, Angelo ^{[3
]}

Beltrami, Silvia ^{[3
]}

Andreani, Carla ^{[4
]}

Gorini, Giuseppe ^{[5
]}

Frost, Christopher D. ^{[6
]}

机构：

[1] Univ Padua, Reliabil Radiat Effects Adv CMOS Technol Grp, Dipartimento Ingn Informaz, I-35131 Padua, Italy

[2] Univ Milano Bicocca, Dept Mat Sci, I-20125 Milan, Italy

[3] Micron, Res & Dev Technol Dev, I-20041 Agrate Brianza, Italy

[4] Univ Roma Tor Vergata, Dept Phys, I-00133 Rome, Italy

[5] Univ Milano Bicocca, Dept Phys, I-20126 Milan, Italy

[6] Rutherford Appleton Lab, ISIS, Didcot OX11 0QX, Oxon, England

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2012年 / 12卷 / 02期

关键词：

Flash memories; floating gate; neutrons; soft errors; CROSS-SECTION; SOFT ERRORS; SIZE;

D O I：

10.1109/TDMR.2012.2192440

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate atmospheric neutron effects on floating-gate cells in NAND Flash memory devices. Charge loss is shown to occur, particularly at the highest program levels, causing raw bit errors in multilevel cell NAND, but to an extent that does not challenge current mandatory error correction specifications. We discuss the physical mechanisms and analyze scaling trends, which show a rapid increase in sensitivity for decreasing feature size.

引用

页码：437 / 444

页数：8

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