Crystallization behaviors of ZnxSb100-x thin films for ultralong data retention phase change memory applications

被引：63

作者：

Chen, Yimin ^{[1
]}

Wang, Guoxiang ^{[1
]}

Shen, Xiang ^{[1
]}

Xu, Tiefeng ^{[1
]}

Wang, R. P. ^{[2
]}

Wu, Liangcai ^{[3
]}

Lu, Yegang ^{[1
]}

Li, Junjian ^{[1
]}

Dai, Shixun ^{[1
]}

Nie, Qiuhua ^{[1
]}

机构：

[1] Ningbo Univ, Adv Technol Res Inst, Lab Infrared Mat & Devices, Ningbo 315211, Zhejiang, Peoples R China

[2] Australian Natl Univ, Laser Phys Ctr, Canberra, ACT 0200, Australia

[3] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

来源：

CRYSTENGCOMM | 2014年 / 16卷 / 05期

关键词：

SCIENCE;

D O I：

10.1039/c3ce42024h

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

ZnxSb100-x films with low Zn content are crystallized in a single-step process with Sb, while the film (Zn/Sb ratio is about 1:1) exhibits a two-step crystallization process with ZnSb metastable and stable phases. Importantly, ZnSb films have higher crystallization temperature (similar to 257 degrees C), larger crystalline activation energy (similar to 5.63 eV), better 10 year-data-retention (similar to 201 degrees C) and lower melting temperature (similar to 500 degrees C).

引用

页码：757 / 762

页数：6

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