New a-IGZO Pixel Circuit Composed of Three Transistors and One Capacitor for Use in High-Speed-Scan AMOLED Displays

被引：32
作者：
Lin, Chih-Lung [1 ,2 ]
Chen, Fu-Hsing [1 ]
Hung, Chia-Che [1 ]
Chen, Po-Syun [1 ]
Deng, Ming-Yang [1 ]
Lu, Chun-Ming [1 ]
Huang, Tzuen-Hsi [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan
来源：
JOURNAL OF DISPLAY TECHNOLOGY | 2015年 / 11卷 / 12期
关键词：
Active-matrix organic light-emitting diode (AMOLED); amorphous indium-gallium-zinc-oxide (a-IGZO); high-speed-scan; TFTS;
D O I：
10.1109/JDT.2015.2494064
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An amorphous indium-gallium-zinc-oxide (a-IGZO) pixel circuit with three transistors and one capacitor is proposed for use in high-speed-scan active-matrix organic light-emitting diode (AMOLED) displays. The proposed pixel circuit can compensate for the threshold voltage shifts in both normally-off and normally-on a-IGZO TFTs. Based on the simulation results with +/-1 V threshold voltage shifts of the driving TFT, the relative error rates of OLED currents are less than 4.46% for the entire range of data voltages (-9.9 V similar to 5 V).
引用
收藏
页码：1031 / 1034
页数：4
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