Deep trapping states in cerium doped (Lu,Y,Gd)3(Ga,Al)5O12 single crystal scintillators

被引：37

作者：

Mihokova, E. ^{[1
]}

Vavru, K. ^{[2
]}

Kamada, K. ^{[3
]}

Babin, V. ^{[1
]}

Yoshikawa, A. ^{[4
]}

Nikl, M. ^{[1
]}

机构：

[1] Inst Phys AS CR, Vvi, Prague 16253 6, Czech Republic

[2] Czech Tech Univ, Fac Nucl Sci & Phys Engn, CR-11519 Prague 1, Czech Republic

[3] Furukawa Co Ltd, Mat Res Lab, Tsukuba, Ibaraki 3050856, Japan

[4] Tohoku Univ, IMR, Sendai, Miyagi 9808577, Japan

来源：

RADIATION MEASUREMENTS | 2013年 / 56卷

基金：

欧盟地平线“2020”;

关键词：

Thermally stimulated luminescence; Scintillators; Oxides;

D O I：

10.1016/j.radmeas.2012.12.018

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

We study deep trapping states in Ce3+-doped garnet crystals with the composition (Lu,Y,Gd)(3)(Ga,Al)(5)O-12, recently shown as having remarkably high light yield. We use thermally stimulated luminescence (TSL) technique above room temperature and determine the composition Gd3Ga3Al2O12 as the host showing the lowest concentration of traps. This host consistently manifests very low afterglow comparable to that of the standard BGO crystal. We also perform TSL glow peak analysis based on the initial rise technique to evaluate trap depth and other characteristics associated with TSL peaks. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：98 / 101

页数：4

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