The influence of annealing atmosphere on the phase formation of Cu-Sn-S ternary compound by SILAR method

被引：15

作者：

Guan, Hao ^{[1
]}

Shen, Honglie ^{[1
]}

Gao, Chao ^{[1
]}

He, Xiancong ^{[1
]}

机构：

[1] Nanjing Univ Aeronaut & Astronaut, Coll Mat Sci & Technol, Nanjing 210016, Jiangsu, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2013年 / 24卷 / 09期

基金：

美国国家科学基金会;

关键词：

OPTICAL-PROPERTIES; CRYSTAL-STRUCTURE; SULFIDES;

D O I：

10.1007/s10854-013-1227-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of annealing atmosphere on the phase formation of Cu-Sn-S ternary compound by SILAR method was studied. Structural, optical and electrical properties of the compound were studied for the samples annealed at 420 A degrees C for 1 h in different atmosphere. X-ray diffraction and Raman spectra showed that Cu2SnS3 cubic phase was obtained in an atmosphere of nitrogen and sulfur vapor mixture, while Cu4SnS4 orthorhombic phase was obtained in H2S atmosphere. An optical band-gap of 0.98 eV was obtained for Cu2SnS3 and 0.93 eV for Cu4SnS4 phase. The activation energies are about 0.1 eV for Cu2SnS3 phase and 0.06 eV for the Cu4SnS4 phase in high temperature region, but those are about 0.007 and 0.009 eV for them in low temperature region respectively.

引用

页码：3195 / 3198

页数：4

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