Dynamics of high-density excitons and electron-hole plasma in ZnO epitaxial thin films

被引:20
|
作者
Arai, N
Takeda, J
Ko, HJ
Yao, T
机构
[1] Yokohama Natl Univ, Grad Sch Engn, Dept Phys, Yokohama, Kanagawa 2408501, Japan
[2] Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan
关键词
ZnO; electron-hole plasma; exciton-exciton collision; LO-phonon scattering; optical Kerr gate; MOLECULAR-BEAM EPITAXY; STIMULATED-EMISSION; SPECTROSCOPY; SCATTERING;
D O I
10.1016/j.jlumin.2006.01.003
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Time-resolved luminescence spectra due to an electron-hole plasma (EHP emission) and an exciton-exciton scattering process (P emission) were measured in ZnO epitaxial thin films under band-to-band excitation by the optical Kerr gate method. We find that both the EHP and P emissions emerge with a long time delay of a few picoseconds. The time delay observed decreases quadratically with the excitation density below the critical Mott density. These results imply that the P (EHP) emission emerges after completing thermal cooling of excitons (electrons and holes) toward the exciton band bottom (renormalized band gap) through multiple LO-phonon emissions. As the excitation density increases, the exciton-exciton scattering process also plays an important role on cooling and relaxation of high-density excitons. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:346 / 349
页数:4
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