Dynamics of high-density excitons and electron-hole plasma in ZnO epitaxial thin films

被引:20
作者
Arai, N
Takeda, J
Ko, HJ
Yao, T
机构
[1] Yokohama Natl Univ, Grad Sch Engn, Dept Phys, Yokohama, Kanagawa 2408501, Japan
[2] Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan
关键词
ZnO; electron-hole plasma; exciton-exciton collision; LO-phonon scattering; optical Kerr gate; MOLECULAR-BEAM EPITAXY; STIMULATED-EMISSION; SPECTROSCOPY; SCATTERING;
D O I
10.1016/j.jlumin.2006.01.003
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Time-resolved luminescence spectra due to an electron-hole plasma (EHP emission) and an exciton-exciton scattering process (P emission) were measured in ZnO epitaxial thin films under band-to-band excitation by the optical Kerr gate method. We find that both the EHP and P emissions emerge with a long time delay of a few picoseconds. The time delay observed decreases quadratically with the excitation density below the critical Mott density. These results imply that the P (EHP) emission emerges after completing thermal cooling of excitons (electrons and holes) toward the exciton band bottom (renormalized band gap) through multiple LO-phonon emissions. As the excitation density increases, the exciton-exciton scattering process also plays an important role on cooling and relaxation of high-density excitons. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:346 / 349
页数:4
相关论文
共 13 条
[1]   High temperature excitonic stimulated emission from ZnO epitaxial layers [J].
Bagnall, DM ;
Chen, YF ;
Zhu, Z ;
Yao, T ;
Shen, MY ;
Goto, T .
APPLIED PHYSICS LETTERS, 1998, 73 (08) :1038-1040
[2]   Optically pumped lasing of ZnO at room temperature [J].
Bagnall, DM ;
Chen, YF ;
Zhu, Z ;
Yao, T ;
Koyama, S ;
Shen, MY ;
Goto, T .
APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232
[3]   Stimulated emission and optical gain in ZnO epilayers grown by plasma-assisted molecular-beam epitaxy with buffers [J].
Chen, YF ;
Tuan, NT ;
Segawa, Y ;
Ko, H ;
Hong, S ;
Yao, T .
APPLIED PHYSICS LETTERS, 2001, 78 (11) :1469-1471
[4]   Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization [J].
Chen, YF ;
Bagnall, DM ;
Koh, HJ ;
Park, KT ;
Hiraga, K ;
Zhu, ZQ ;
Yao, T .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3912-3918
[5]  
HUANG R, 2002, PHYS REV B, V65, P10830
[6]   Stimulated emission induced by exciton-exciton scattering in ZnO/ZnMgO multiquantum wells up to room temperature [J].
Sun, HD ;
Makino, T ;
Tuan, NT ;
Segawa, Y ;
Tang, ZK ;
Wong, GKL ;
Kawasaki, M ;
Ohtomo, A ;
Tamura, K ;
Koinuma, H .
APPLIED PHYSICS LETTERS, 2000, 77 (26) :4250-4252
[7]   Femtosecond optical Kerr gate fluorescence spectroscopy for ultrafast relaxation processes [J].
Takeda, J ;
Nakajima, K ;
Kurita, S ;
Tomimoto, S ;
Saito, S ;
Suemoto, T .
JOURNAL OF LUMINESCENCE, 2000, 87-9 :927-929
[8]   Time-resolved luminescence spectroscopy by the optical Kerr-gate method applicable to ultrafast relaxation processes [J].
Takeda, J ;
Nakajima, K ;
Kurita, S ;
Tomimoto, S ;
Saito, S ;
Suemoto, T .
PHYSICAL REVIEW B, 2000, 62 (15) :10083-10087
[9]  
Takeda J, 2002, PHYS STATUS SOLIDI B, V229, P877, DOI 10.1002/1521-3951(200201)229:2<877::AID-PSSB877>3.0.CO
[10]  
2-K