A Nonvolatile Spintronic Memory Element with a Continuum of Resistance States

被引：12

作者：

Fang, Yeyu ^{[1
]}

Dumas, R. K. ^{[1
]}

Nguyen, T. N. Anh ^{[2
]}

Mohseni, S. M. ^{[2
]}

Chung, S. ^{[2
]}

Miller, C. W. ^{[3
]}

Akerman, Johan ^{[1
,2
]}

机构：

[1] Univ Gothenburg, Dept Phys, S-41296 Gothenburg, Sweden

[2] KTH Royal Inst Technol, Sch Informat & Commun Technol, S-16440 Stockholm, Sweden

[3] Univ S Florida, Dept Phys, Tampa, FL 33620 USA

来源：

ADVANCED FUNCTIONAL MATERIALS | 2013年 / 23卷 / 15期

基金：

美国国家科学基金会; 瑞典研究理事会;

关键词：

multilevel memory; giant magnetoresistance; magnetic domains; spintronic memristor; graded anisotropy; MAGNETIC-ANISOTROPY; DEPENDENCE;

D O I：

10.1002/adfm.201202319

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A continuum of stable remanent resistance states is reported in perpendicularly magnetized pseudo spin valves with a graded anisotropy free layer. The resistance states can be systematically set by an externally applied magnetic field. The gradual reversal of the free layer with applied field and the field-independent fixed layer leads to a range of stable and reproducible remanent resistance values, as determined by the giant magnetoresistance of the device. An analysis of first-order reversal curves combined with magnetic force microscopy shows that the origin of the effect is the field-dependent population of up and down domains in the free layer.

引用

页码：1919 / 1922

页数：4

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