Metal organic chemical vapor deposition growth of Cd1-xFexSe thin films

被引：2

作者：

Ju, Z. G. ^{[1
,2
]}

Lu, Y. M. ^{[1
]}

Zhang, J. Y. ^{[1
]}

Shan, C. X. ^{[1
]}

Zhao, D. X. ^{[1
]}

Zhang, Z. Z. ^{[1
]}

Li, B. H. ^{[1
]}

Yao, B. ^{[1
]}

Shen, D. Z. ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Excited State Proc, Changchun 130033, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 10039, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2008年 / 255卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Cd1-xFexSe; Thin film; PL; MOCVD;

D O I：

10.1016/j.apsusc.2008.09.049

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

High quality Cd1-xFexSe thin films with different Fe content were grown on sapphire substrates by using low-pressure metal organic chemical vapor deposition (LP-MOCVD). The structural properties of these films were examined by X-ray diffraction (XRD). Temperature dependent spectra were also used to study the origin of the emission peak. Strong near band emission (NBE) without other defect related emission at room temperature demonstrates that the thin films have high optical quality. Absorption spectra were used to estimate the band gap of the Cd1-xFexSe films. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：3332 / 3335

页数：4

共 17 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].