An Analytical 2D Current Model of Double-Gate Schottky-Barrier MOSFETs

被引：0

作者：

Zhao, Yu Ning ^{[1
]}

Du, Gang ^{[1
]}

Kang, Jin Feng ^{[1
]}

Liu, Xiao Yan ^{[1
]}

Han, Ruqi ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

SISPAD: 2008 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2008年

关键词：

Schottky-Barrier; 2D potential distribution; Tunneling current;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, an analytical 2D current model of Double-Gate Schottky-Barrier MOSFETs (DG SB MOSFETs) is developed, which takes the advantage of the 2D potential distribution. Simulation results have shown that current density undergo notable changes along the channel depth directions, indicating that I-ds and V-th calculated by 2D current model achieve a better accuracy than Surf model

引用

页码：133 / 136

页数：4

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