Origin of improved tunability and loss in N2 annealed barium strontium titanate films

被引：6

作者：

Mostaed, Ali ^{[1
,2
]}

Bakaimi, Ioanna ^{[3
]}

Hayden, Brian ^{[3
,4
]}

Sinclair, Derek C. ^{[1
]}

Reaney, Ian M. ^{[1
]}

机构：

[1] Univ Sheffield, Dept Mat Sci & Engn, Sheffield S1 3JD, S Yorkshire, England

[2] Univ Oxford, Dept Mat, Parks Rd, Oxford OX1 3PH, England

[3] Univ Southampton, Sch Chem, Southampton SO17 1BJ, Hants, England

[4] Ilika Technol, Unit 10a Quadrangle,Abbey Pk Ind Estate, Romsey SO51 9DL, Hants, England

来源：

PHYSICAL REVIEW MATERIALS | 2020年 / 4卷 / 09期

基金：

英国工程与自然科学研究理事会;

关键词：

HIGH-THROUGHPUT SYNTHESIS; DIELECTRIC-PROPERTIES; THIN-FILMS; DEPENDENCE; OXYGEN; PERMITTIVITY; ORIENTATION; TEMPERATURE; TRANSITION; CAPACITORS;

D O I：

10.1103/PhysRevMaterials.4.094410

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Barium strontium titanate (BSTO) thin films were deposited on Pt(111) by high throughput evaporative physical vapor deposition and then annealed at 650 degrees C for 30 min under N-2 atmosphere. Using advanced transmission electron microscopy, energy-dispersive x-ray spectroscopy and electron energy-loss spectroscopy, we directly show that not only does N substitute for O in the BSTO lattice but that it also compensates for Ti3+ ions, suppressing conductivity, thereby reducing dielectric loss and enhancing dielectric tunability. However, this effect is negated near the film edge where we speculate that exposed Pt acts as a reservoir of adsorbed/absorbed O and alters the local N-2 concentration during annealing.

引用

页数：7

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