Direct observation of epitaxial alignment of Au on MoS2 at atomic resolution

被引:32
|
作者
Sun, Yinghui [1 ]
Zhao, Haofei [1 ]
Zhou, Dan [2 ]
Zhu, Yuchen [1 ]
Ye, Huanyu [1 ]
Moe, Yan Aung [1 ]
Wang, Rongming [1 ]
机构
[1] Univ Sci & Technol Beijing, Beijing Adv Innovat Ctr Mat Genome Engn, Beijing Key Lab Magnetophotoelect Composite & Int, Sch Math & Phys, Beijing 100083, Peoples R China
[2] Max Planck Inst Solid State Res, Stuttgart Ctr Electron Microscopy, D-70569 Stuttgart, Germany
基金
中国国家自然科学基金;
关键词
atom migration; MoS2; in situ TEM; metal-semiconductor interface; Moire patterns; 2-DIMENSIONAL MATERIALS; GRAPHENE; SURFACE; NANOPARTICLES; TRANSITION; EVOLUTION; GROWTH; FIELD; COALESCENCE; ELECTRONICS;
D O I
10.1007/s12274-019-2329-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The morphology and structural stability of metal/2D semiconductor interfaces strongly affect the performance of 2D electronic devices and synergistic catalysis. However, the structural evolution at the interfaces has not been well explored particularly at atomic resolution. In this work, we study the structural evolution of Au nanoparticles (NPs) on few-layer MoS2 by high resolution transmission electron microscope (HRTEM) and quantitative high-angle annular dark field scanning TEM. It is found that in the transition of Au from nanoparticles to dendrites, a dynamically epitaxial alignment between Au and MoS2 lattices is formed, and Moire patterns can be directly observed in HRTEM images due to the mismatch between Au and MoS2 lattices. This epitaxial alignment can occur in ambient conditions, and can also be accelerated by the irradiation of high-energy electron beam. In situ observation clearly reveals the rotation of Au NPs, the atom migration inside Au NPs, and the transfer of Au atoms between neighboring Au NPs, finally leading to the formation of epitaxially aligned Au dendrites on MoS2. The structural evolution of metal/2D semiconductor interfaces at atomic scale can provide valuable information for the design and fabrication of the metal/2D semiconductor nano-devices with desired physical and chemical performances.
引用
收藏
页码:947 / 954
页数:8
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