Ultra-low temperature poly-Si thin film transistor for plastic substrate

被引：0

作者：

Kim, DY ^{[1
]}

Kwon, JY

Jung, JS

Park, KB

Cho, HS

Lim, H

Kim, JM

Yin, HX

Zhang, XX

Noguchi, T

机构：

[1] Samsung Adv Inst Technol, Kyunggido 440712, South Korea

[2] Sungkyunkwan Univ, Kyunggido 440746, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2006年 / 48卷

关键词：

sputtering; crystallization; poly-Si TFT;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We studied the fabrication of poly-Si TFT (thin film transistor) by using excimer laser crystallization of sputtered a-Si film at below 200 degrees C. We could obtain the precursor a-Si film with low impurity gas content of 0.39 % by using Xe sputtering and poly-Si film with maximum grain size of 1 mu m. We successfully fabricated poly-Si TFT with a field-effect mobility of 70 cm(2)/V-sec on glass and 15 cm(2)/V.sec on plastic by using ultra low temperature process at below 200 degrees C, respectively.

引用

页码：S61 / S63

页数：3

共 13 条

[1] CHO HS, 2004, P 4 INT M INF DISPL, P102
[2] High mobility thin film transistors fabricated on a plastic substrate at a processing temperature of 110°C
Gosain, DP
Noguchi, T
Usui, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (3AB): : L179 - L181
[3] GOSAIN DP, 1997, 1997 INT WORKSH ACT, P51
[4] Jung JS, 2004, J KOREAN PHYS SOC, V45, pS861
[5] Kim DY, 2004, J KOREAN PHYS SOC, V45, pS847
[6] KIM DY, 2004, P 11 INT DISPL WORKS, P423
[7] Low temperature poly-Si thin film transistor on plastic substrates
Kwon, JY
Kim, DY
Cho, HS
Park, KB
Jung, JS
Kim, JM
Park, YS
Noguchi, T
[J]. IEICE TRANSACTIONS ON ELECTRONICS, 2005, E88C (04): : 667 - 671
[8] Lee MC, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P215
[9] Noguchi T, 1999, J KOREAN PHYS SOC, V34, pS265
[10] High-mobility poly-Si thin film transistors fabricated on stainless-steel foils by low-temperature processes using sputter-depositions
Serikawa, T
Omata, F
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (5A): : L393 - L395

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