In-plane isotropic magnetic and electrical properties of MnAs/InAs/GaAs(111)B hybrid structure

被引：9

作者：

Islam, Md. Earul ^{[1
]}

Akabori, Masashi ^{[1
]}

机构：

[1] JAIST, CNMT, 1-1 Asahidai, Nomi, Ishikawa 9231292, Japan

来源：

PHYSICA B-CONDENSED MATTER | 2018年 / 532卷

关键词：

Molecular beam epitaxy (MBE); MnAs; InAs; GaAs; (111)B; Magnetic properties; Transmission line model (TLM); Lateral spin-valve (LSV); ORIENTATION; GAAS;

D O I：

10.1016/j.physb.2017.03.013

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We characterized in-plane magnetic and electrical properties of MnAs/InAs/GaAs(111) B hybrid structure grown by molecular beam epitaxy (MBE). We observed isotropic easy magnetization in two crystallographic in-plane directions, [(2) over bar 110] and [0 (2) over bar 10] of hexagonal MnAs i. e. [(2) over bar 10] and [11 (2) over bar] of cubic InAs. We also fabricated transmission line model (TLM) devices, and observed almost isotropic electrical properties in two crystallographic in-plane directions, [(2) over bar 10] and [11 (2) over bar] of cubic InAs. Also we tried to fabricate and characterize lateral spin-valve (LSV) devices from the hybrid structure. We could roughly estimate the spin injection efficiency and the spin diffusion length at room temperature in [11 (2) over bar] direction. We believe that the hybrid structures are helpful to design spintronic device with good flexibility in-plane.

引用

页码：95 / 98

页数：4

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