Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power

被引：5

作者：

Liu, JQ ^{[1
]}

Liu, FQ ^{[1
]}

Lu, XZ ^{[1
]}

Guo, Y ^{[1
]}

Wang, ZG ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 12期

关键词：

X-ray diffraction; molecular beam epitaxy; semiconducting gallium compounds; quantum-cascade lasers (QCLs);

D O I：

10.1016/j.sse.2005.09.005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quasi-continuous-wave operation of GaAs/AlGaAs quantum-cascade lasers with high average optical power is demonstrated. Double X-ray diffraction has been used to investigate the quality of the epitaxial material. The compositional gradients and the interface quality are controlled effectively. The corrected average power of per facet about 17 mW and temperature tuning coefficient of the gain peak about 0.91 nm/K from 83 K to 140 K is achieved in pulse operation. Best value of threshold current density is less than 3.0 kA/cm(2) at 83 K. (C) 2005 Elsevier Ltd. All rights reserved.

引用

页码：1961 / 1964

页数：4

共 10 条

[1]

Fewster P.F., 2003, XRAY SCATTERING SEMI

[2] Lasing properties of GaAs/(Al,Ga)As quantum-cascade lasers as a function of injector doping density [J].

Giehler, M ;

Hey, R ;

Kostial, H ;

Cronenberg, S ;

Ohtsuka, T ;

Schrottke, L ;

Grahn, HT .

APPLIED PHYSICS LETTERS, 2003, 82 (05) :671-673

[3] Growth and characterization of InGaAs/InAlAs quantum cascade lasers [J].

Liu, FQ ;

Zhang, QS ;

Zhang, YZ ;

Ding, D ;

Xu, B ;

Wang, ZG .

SOLID-STATE ELECTRONICS, 2001, 45 (10) :1831-1835

[4] Improved CW operation of GaAs-Based QC lasers:: Tmax=150 K [J].

Page, H ;

Dhillon, S ;

Calligaro, M ;

Becker, C ;

Ortiz, V ;

Sirtori, C .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2004, 40 (06) :665-672

[5] High reflectivity metallic mirror coatings for mid-infrared (λ ≈ 9 μm) unipolar semiconductor lasers [J].

Page, H ;

Collot, P ;

de Rossi, A ;

Ortiz, V ;

Sirtori, C .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2002, 17 (12) :1312-1316

[6] 300 K operation of a GaAs-based quantum-cascade laser at λ≈9 μm [J].

Page, H ;

Becker, C ;

Robertson, A ;

Glastre, G ;

Ortiz, V ;

Sirtori, C .

APPLIED PHYSICS LETTERS, 2001, 78 (22) :3529-3531

[7] High-temperature performance of GaAs-based bound-to-continuum quantum-cascade lasers [J].

Pflügl, C ;

Schrenk, W ;

Anders, S ;

Strasser, G ;

Becker, C ;

Sirtori, C ;

Bonetti, Y ;

Muller, A .

APPLIED PHYSICS LETTERS, 2003, 83 (23) :4698-4700

[8] GaAs-AlGaAs quantum cascade lasers: Physics, technology, and prospects [J].

Sirtori, C ;

Page, H ;

Becker, C ;

Ortiz, V .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2002, 38 (06) :547-558

[9] Low-loss Al-free waveguides for unipolar semiconductor lasers [J].

Sirtori, C ;

Kruck, P ;

Barbieri, S ;

Page, H ;

Nagle, J ;

Beck, M ;

Faist, J ;

Oesterle, U .

APPLIED PHYSICS LETTERS, 1999, 75 (25) :3911-3913

[10] GaAs/AlxGa1-x as quantum cascade lasers [J].

Sirtori, C ;

Kruck, P ;

Barbieri, S ;

Collot, P ;

Nagle, J ;

Beck, M ;

Faist, J ;

Oesterle, U .

APPLIED PHYSICS LETTERS, 1998, 73 (24) :3486-3488

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