MBE HgCdTe technology: A very general solution to IR detection, described by "Rule 07", a very convenient heuristic

被引:289
作者
Tennant, W. E. [1 ]
Lee, Donald [1 ]
Zandian, Majid [1 ]
Piquette, Eric [1 ]
Carmody, Michael [1 ]
机构
[1] Teledyne Imaging Sensors, Camarillo, CA 93212 USA
关键词
infrared detector; IR; HgCdTe; focal-plane array; MBE; InSb; InGaAs;
D O I
10.1007/s11664-008-0426-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Rule 07, a simple empirical relationship, conveniently estimates state-of-the-art HgCdTe dark current performance over 13 orders of magnitude, covering wavelength ranges form short-wave infrared (SWIR) to long-wave infrared (LWIR), from room temperature to liquid nitrogen temperatures. The best HgCdTe, in some cases, approaches the external radiative limit of performance, but is typically two to three orders of magnitude above that, being limited by defect generation centers as yet unidentified and/or by Auger mechanisms. The empirical relationship represents the range of detectors fabricated at Teledyne using our molecular beam epitaxy (MBE)-based double-layer planar heterostructure (DLPH) technology, but also appears to characterize good detectors from other laboratories.
引用
收藏
页码:1406 / 1410
页数:5
相关论文
共 15 条
[1]  
ARIAS JM, 1994, P SOC PHOTO-OPT INS, V2228, P210, DOI 10.1117/12.179662
[2]   Uniform low defect density molecular beam epitaxial HgCdTe [J].
Bajaj, J ;
Arias, JM ;
Zandian, M ;
Edwall, DD ;
Pasko, JG ;
Bubulac, LO ;
Kozlowski, LJ .
JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (08) :1394-1401
[3]  
BAJAJ J, 2005, P INT WORKSH SEM DEV
[4]  
COHEN M, 2000, 15 NDIA NIGHT OPS S
[5]   Dark current generating mechanisms in short wavelength infrared photovoltaic detectors [J].
Dewames, RE ;
Edwall, DD ;
Zandian, M ;
Bubulac, LO ;
Pasko, JG ;
Tennant, WE ;
Arias, JM ;
D'Souza, A .
JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (06) :722-726
[6]   HDVIP™ FPA technology at DRS [J].
Kinch, MA .
INFRARED TECHNOLOGY AND APPLICATIONS XXVII, 2001, 4369 :566-578
[7]   MCT-on-silicon negative luminescence devices with high efficiency [J].
Lindle, J. R. ;
Bewley, W. W. ;
Vurgaftman, I. ;
Meyer, J. R. ;
Thomas, M. L. ;
Tennant, W. E. ;
Edwall, D. D. ;
Piquette, E. .
JOURNAL OF ELECTRONIC MATERIALS, 2007, 36 (08) :988-992
[8]   Long Wave HgCdTe staring arrays at Sofradir:: From 9μm to 13+μm cut-offs for high performance applications [J].
Manissadjian, A ;
Tribolet, P ;
Destefanis, G ;
De Borniol, E .
Infrared Technology and Applications XXXI, Pts 1 and 2, 2005, 5783 :231-242
[9]   THE IMPACT OF CHARACTERIZATION TECHNIQUES ON HGCDTE INFRARED DETECTOR TECHNOLOGY [J].
REINE, MB ;
MASCHHOFF, KR ;
TOBIN, SP ;
NORTON, PW ;
MROCZKOWSKI, JA ;
KRUEGER, EE .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (06) :788-804
[10]   Infrared detectors: an overview [J].
Rogalski, A .
INFRARED PHYSICS & TECHNOLOGY, 2002, 43 (3-5) :187-210