Low-Voltage InGaZnO Ion-Sensitive Thin-Film Transistors Fabricated by Low-Temperature Process

被引：16

作者：

Lu, Chih-Hung ^{[1
]}

Hou, Tuo-Hung ^{[1
]}

Pan, Tung-Ming ^{[2
,3
]}

机构：

[1] Natl Chiao Tung Univ, Inst Elect, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Chang Gung Univ, Dept Elect Engn, Taoyuan 33302, Taiwan

[3] Chang Gung Mem Hosp, Div Urol, Taoyuan 33302, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 12期

关键词：

HfO2; InGaZnO; ion-sensitive thin-film transistor (ISTFT); pH sensitivity; FIELD-EFFECT-TRANSISTORS; SENSORS; ENHANCEMENT; HYSTERESIS; OPERATION; DNA;

D O I：

10.1109/TED.2016.2614959

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this brief, we developed a low-voltage (V-DS = 0.5 V and V-GS = 0.8 V) InGaZnO ion-sensitive thin-film transistor (ISTFT) sensor using a high-kappa HfO2 sensing membrane grown by low-temperature atomic layer deposition. The InGaZnO TFT exhibited a low threshold voltage of 0.2 V, a high field-effect mobility of 5.9 cm(2)/V-s, a small subthreshold swing of 90 mV/decade, and high I-ON/I-OFF ratio of 2.4x10(7). The pH sensor based on an InGaZnO ISTFT device exhibits a high sensitivity of 60.5 mV/pH and good linearity in the pH range from 3 to 11. Moreover, such a pH ISTFT sensor presents a hysteresis width of 8 mV after a pH loop of 7 -> 4 -> 7 -> 10 -> 7 and a low drift rate of 2.5 mV/h at pH 7.

引用

页码：5060 / 5063

页数：4

共 21 条

[11] Low-voltage InGaZnO thin-film transistors with Al2O3 gate insulator grown by atomic layer deposition [J].

Kim, J. B. ;

Fuentes-Hernandez, C. ;

Potscavage, W. J., Jr. ;

Zhang, X. -H. ;

Kippelen, B. .

APPLIED PHYSICS LETTERS, 2009, 94 (14)

[12] Back-Channel Electrolyte-Gated a-IGZO Dual-Gate Thin-Film Transistor for Enhancement of pH Sensitivity Over Nernst Limit [J].

Kumar, Narendra ;

Kumar, Jitendra ;

Panda, Siddhartha .

IEEE ELECTRON DEVICE LETTERS, 2016, 37 (04) :500-503

[13] Microwave Annealing Effect for Highly Reliable Biosensor: Dual-Gate Ion-Sensitive Field-Effect Transistor Using Amorphous InGaZnO Thin-Film Transistor [J].

Lee, In-Kyu ;

Lee, Kwan Hyi ;

Lee, Seok ;

Cho, Won-Ju .

ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (24) :22680-22686

[14] Preparation and characteristics of ruthenium dioxide for pH array sensors with real-time measurement system [J].

Liao, Yi-Hung ;

Chou, Jung-Chuan .

SENSORS AND ACTUATORS B-CHEMICAL, 2008, 128 (02) :603-612

[15] Low-Cost pH Sensors Based on Low-Voltage Oxide-Based Electric-Double-Layer Thin Film Transistors [J].

Liu, Ning ;

Liu, Yanghui ;

Zhu, Liqiang ;

Shi, Yi ;

Wan, Qing .

IEEE ELECTRON DEVICE LETTERS, 2014, 35 (04) :482-484

[16] Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J].

Nomura, K ;

Ohta, H ;

Takagi, A ;

Kamiya, T ;

Hirano, M ;

Hosono, H .

NATURE, 2004, 432 (7016) :488-492

[17] Electrical and Reliability Characteristics of High-κ HoTiO3 α-InGaZnO Thin-Film Transistors [J].

Pan, Tung-Ming ;

Chen, Ching-Hung ;

Liu, Jiang-Hung ;

Her, Jim-Long ;

Koyama, Keiichi .

IEEE ELECTRON DEVICE LETTERS, 2014, 35 (01) :66-68

[18] Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water [J].

Park, Jin-Seong ;

Jeong, Jae Kyeong ;

Chung, Hyun-Joong ;

Mo, Yeon-Gon ;

Kim, Hye Dong .

APPLIED PHYSICS LETTERS, 2008, 92 (07)

[19] Printable Ultrathin Metal Oxide Semiconductor-Based Conformal Biosensors [J].

Rim, You Seung ;

Bae, Sang-Hoon ;

Chen, Huajun ;

Yang, Jonathan L. ;

Kim, Jaemyung ;

Andrews, Anne M. ;

Weiss, Paul S. ;

Yang, Yang ;

Tseng, Hsian-Rong .

ACS NANO, 2015, 9 (12) :12174-12181

[20] Label-free DNA sensor based on organic thin film transistors [J].

Yan, Feng ;

Mok, Sheung Man ;

Yu, Jinjiang ;

Chan, Helen L. W. ;

Yang, Mo .

BIOSENSORS & BIOELECTRONICS, 2009, 24 (05) :1241-1245

← 1 2 3 →